SMK1430DI
Advanced N-Ch Power MOSFET
SWITCHING REGURATOR APPLICATIONS
Features
•
•
•
•
High Voltage : BV
DSS
=300V(Min.)
Low C
rss
: C
rss
=19pF(Typ.)
Low gate charge : Qg=24nC(Typ.)
Low R
DS(on)
: R
DS(on)
=0.29Ω(Max.)
PIN Connection
D
D
Ordering Information
Type No.
SMK1430DI
Marking
SMK1430
Package Code
D2-PAK
G
S
G
S
D2-PAK
Marking Diagram
Column 1 : Manufacturer
AUK
GYMDD
SMK1430
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
Absolute maximum ratings
(
T
C
=25°C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
②
②
①
①
*
Symbol
V
DSS
V
GSS
I
D
T
C
=25°C
T
C
=100°C
I
DM
P
D
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
300
±30
14
8.4
90
140
14
800
14
25
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max.
0.89
62.5
Unit
°C/W
KSD-T6S002-003
1
SMK1430DI
Electrical Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0V
I
D
=250uA, V
DS
=V
GS
V
DS
=300V, V
GS
=0V
V
DS
=300V, T
C
=125
°C
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=7A
V
DS
=5V, I
D
=7A
V
GS
=0V, V
DS
=25V
f=1 MHz
Min. Typ. Max.
300
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.24
7.8
1075
182
19
22
145
45
70
24
8.5
9.5
-
5.0
1
200
±100
0.29
-
1344
228
23.8
-
-
-
-
30
-
-
Unit
V
V
uA
nA
Ω
S
pF
V
DD
=150V, I
D
=14A
R
G
=25Ω
ns
③
④
V
DS
=240V, V
GS
=10V
I
D
=14A
nC
③
④
-
Source-Drain Diode Ratings and Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=14A
I
S
=14A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
-
235
1.6
14
56
1.4
-
-
A
V
ns
uC
Note ;
①
Repetitive rating : Pulse width limited by maximum junction temperature
②
L=6.8mH, I
AS
=14A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25℃
③
Pulse Test : Pulse width≤300us, Duty cycle≤2%
④
Essentially independent of operating temperature
KSD-T6S002-003
2
SMK1430DI
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
Fig. 2 I
D
- V
GS
Fig. 3 R
DS(on)
- I
D
℃
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
KSD-T6S002-003
3
SMK1430DI
Fig. 7 V
DSS
- T
J
Fig. 8 R
DS(on)
- T
J
C
C
Fig. 9
I
D
- T
C
Fig. 10 Safe Operating Area
*
Fig. 11 Transient Thermal Impedance
KSD-T6S002-003
4
Fig. 11 Gate Charge Test Circuit & Waveform
SMK1430DI
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T6S002-003
5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
