< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
OUTLINE DRAW
ING
Unit : m illim eters
FEATURES
High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
High power gain
GLp=11.0dB(TYP.)
@f=2.3GHz
High power added efficiency
add=45%(TYP.)
@f=2.3GHz,P1dB
Hermetic Package
①
2MIN
φ2.2
0.6±0.2
APPLICATION
For L/S Band power amplifiers
③
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
1.65
0.1
Vds=10V
Ids=1.3A
Rg=100
5.0
0.65
Symbol
V
GSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-15
-15
5
-15
31.5
27.3
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
14.0
V
GDO Gate to drain breakdown voltage
I
D
I
GR
I
GF
P
T
Tch
Tstg
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
GF-7
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Electrical characteristics
Symbol
I
DSS
V
GS(off)
gm
P1dB
add
G
LP
Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power 1dB Compression P
Power added Efficiency
Linear Power Gain
Thermal Resistance
*1
*1
*2
Test conditions
Min.
V
DS
=3V,V
GS
=0V
V
DS
=3V,I
D
=10mA
V
DS
=3V,I
D
=1.3A
V
DS
=10V,I
D
=1.3A,f=2.3GHz
*1:Po=P1dB
*2:Pi=22dBm
Vf
Method
-
-2.0
-
37.0
-
10.0
-
Limits
Typ.
--
-
1.5
38.0
45
11.0
-
Max.
5.0
-5.0
-
-
-
-
9
Unit
A
V
S
dBm
%
dB
C/W
*1:
Channel to case /
Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
1.9±0.4
Absolute maximum ratings
(Ta=25C)
9.0±0.2
2MIN
②
②
4.4+0/-0.3
< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
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Publication Date : Apr., 2011
3
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