< X/Ku band internally matched power GaAs FET >
MGFX36V0717
10.7 – 11.7 GHz BAND / 4W
DESCRIPTION
The MGFX36V0717 is an internally impedance-matched
GaAs power FET especially designed for use in 10.7 – 11.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally impedance matched
High output power
P1dB=4.0W (TYP.) @f=10.7 – 11.7GHz
High linear power gain
GLP=8.0dB (TYP.) @f=10.7 – 11.7GHz
High power added efficiency
P.A.E.=28% (TYP.) @f=10.7 – 11.7GHz
APPLICATION
QUALITY
IG
For use in 10.7 – 11.7 GHz band power amplifiers
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=1.2A Refer to Bias Procedure
Absolute maximum ratings
Symbol
VGDO
VGSO
ID
IGR
IGF
PT *1
Tch
Tstg
(Ta=25C)
Parameter
Gate to drain breakdown voltage
Gate to source breakdown voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
Ratings
-15
-15
2.8
-9.0
18.0
27.2
175
-65 to +175
Unit
V
V
A
mA
mA
W
C
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
*1 : Tc=25C
Electrical characteristics
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
P.A.E.
Rth(ch-c) *2
(Ta=25C)
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Test conditions
Min.
VDS=3V,VGS=0V
VDS=3V,ID=1.1A
VDS=3V,ID=10mA
VDS=10V,ID(RF off)=1.2A
f=10.7 – 11.7GHz
-
-
-2
34.5
7
-
-
Limits
Typ.
2
1
-3
36
8
28
-
Unit
Max.
2.8
-
-4
-
-
-
5.5
A
S
V
dBm
dB
%
C/W
Linear Power Gain
Power added efficiency
Thermal resistance
*2 :Channel-case
Publication Date : Apr., 2011
1
< X/Ku band internally matched power GaAs FET >
MGFX36V0717
10.7 – 11.7 GHz BAND / 4W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
