Data Sheet
4V Drive Nch + Nch MOSFET
MP6K11
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package(MPT6).
3) Low voltage drive(4V drive).
Dimensions
(Unit : mm)
MPT6
(Duel)
(6)
(5)
(4)
(1)
(2)
(3)
Application
Switching
Packaging specifications
Type
MP6K11
Package
Code
Basic ordering unit (pieces)
Taping
TCR
1000
Inner circuit
(6)
(5)
∗1
(4)
∗2
∗2
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
30
20
3.5
Unit
V
V
A
A
A
A
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
s
I
sp
P
D
Tch
Tstg
*1
12
1.6
12
*1
*2
2.0
W / TOTAL
1.4
W / ELEMENT
150
C
55
to
150
C
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.04 - Rev.A
MP6K11
Electrical characteristics
(Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Gatesource leakage
Drainsource breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drainsource onstate
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turnon delay time
Rise time
Turnoff delay time
Fall time
Total gate charge
Gatesource charge
Gatedrain charge
*Pulsed
Data Sheet
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS (th)
R
DS (on)
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
*
Min.
30
1.0
1.5
Typ.
70
90
110
85
40
20
4
8
18
3
1.9
0.8
0.4
Max.
10
1
2.5
98
126
140
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=3.5A, V
GS
=10V
m I
D
=3.5A, V
GS
=4.5V
I
D
=3.5A, V
GS
=4.0V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I
D
=3.5A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=1.75A, V
DD
15V
V
GS
=10V
R
L
=6.0
R
G
=10
I
D
=3.5A, V
DD
15V
V
GS
=5V
Body
diode characteristics
(Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
Typ.
Max.
1.2
Unit
V
Conditions
Is=3.5A, V
GS
=0V
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2/6
2011.04 - Rev.A
MP6K11
Electrical
characteristic curves
(Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ)
3.5
3
2.5
2
V
GS
= 2.8V
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
DRAIN-SOURCE VOLTAGE : V
DS
[V]
V
GS
= 2.5V
Ta=25°C
Pulsed
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
Data Sheet
Fig.2 Typical Output Characteristics(Ⅱ)
3.5
3
DRAIN CURRENT : I
D
[A]
2.5
2
1.5
1
0.5
Ta=25°C
Pulsed
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : V
DS
[V]
V
GS
= 2.5V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 2.8V
DRAIN CURRENT : I
D
[A]
Fig.3 Typical Transfer Characteristics
10
V
DS
= 10V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=
-
25°C
1000
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Ta=25°C
Pulsed
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
DRAIN CURRENT : I
D
[A]
0.1
100
.
0.01
0.001
0
1
2
3
GATE-SOURCE VOLTAGE : V
GS
[V]
10
0.1
1
DRAIN-CURRENT : I
D
[A]
10
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=
-
25°C
1000
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
V
GS
= 4.5V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=
-
25°C
100
100
10
0.1
1
DRAIN-CURRENT : I
D
[A]
10
10
0.1
1
DRAIN-CURRENT : I
D
[A]
10
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2011.04 - Rev.A
MP6K11
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Data Sheet
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
V
GS
= 4.0V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[mΩ]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=
-
25°C
V
DS
= 10V
Pulsed
100
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=
-
25°C
10
0.1
1
DRAIN-CURRENT : I
D
[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
10
V
GS
=0V
Pulsed
SOURCE CURRENT : Is [A]
10
0.1
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
200
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
150
I
D
= 1.75A
1
I
D
= 3.5A
100
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta=
-
25°C
50
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : V
SD
[V]
0
0
2
4
6
8
GATE-SOURCE VOLTAGE : V
GS
[V]
10
Fig.11 Switching Characteristics
1000
t
d(off)
SWITCHING TIME : t [ns]
t
f
100
Ta=25°C
V
DD
= 15V
V
GS
=10V
R
G
=10Ω
Pulsed
10
Fig.12 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : V
GS
[V]
8
6
4
10
t
d(on)
2
t
r
1
0.01
0.1
1
10
DRAIN-CURRENT : I
D
[A]
0
0
1
2
3
Ta=25°C
V
DD
= 15V
I
D
= 3.5A
Pulsed
4
5
TOTAL GATE CHARGE : Qg [nC]
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4/6
2011.04 - Rev.A
MP6K11
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Data Sheet
Fig.14 Maximum Safe Operating Aera
100
Operation in this area is limited by R
DS(ON)
(V
GS
=10V)
1000
C
iss
CAPACITANCE : C [pF]
DRAIN CURRENT : I
D
(A)
10
100
P
W
=100us
1
P
W
=1ms
P
W
= 10ms
0.1
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.01
C
rss
10
C
oss
Ta=25°C
f=1MHz
V
GS
=0V
1
0.01
0.1
1
10
100
DC operation
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
[V]
DRAIN-SOURCE VOLTAGE : V
DS
[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
Ta=25°C
Single Pulse : 1Unit
1
0.1
0.01
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
Rth
(ch-a)
=89.3°C/W
Rth
(ch-a)
(t)=r(t)×Rth
(ch-a)
0.001
0.01
0.1
1
10
100
1000
0.001
0.0001
PULSE WIDTH : Pw(s)
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5/6
2011.04 - Rev.A
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