TSM4N60
600V N-Channel Power MOSFET
TO-220
ITO-220
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
600
R
DS(on)
( )
2.5 @ V
GS
=10V
I
D
(A)
2
General Description
The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There
devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic
lamp ballasts base on half bridge topology.
Features
●
●
●
●
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Block Diagram
Ordering Information
Part No.
Package
Packing
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
75pcs / Tube
75pcs / Tube
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
TSM4N60CZ C0
TO-220
TSM4N60CZ C0G
TO-220
TSM4N60CI C0
ITO-220
TSM4N60CI C0G
ITO-220
TSM4N60CH C5
TO-251
TSM4N60CH C5G
TO-251
TSM4N60CP RO
TO-252
TSM4N60CP ROG
TO-252
Note: “G” denotes for Halogen Free
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain to Source Avalanche Energy (note c)
Avalanche Current, Repetitive or Not-Repetitive (note d)
Peak Diode Recovery dv/dt (note e)
Total Power Dissipation
@T
C
= 25 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
o
Symbol
V
DS
V
GS
I
D
I
DM
EAS
IAR
dv/dt
TO-220 / TO-251 / TO-252
ITO-220
P
TOT
T
J
T
J
, T
STG
Limit
600
±30
4
16
120
10
4.5
70
25
+150
-55 to +150
Unit
V
V
A
A
mJ
mJ
V/ns
W
o
o
C
C
1/11
Version: D10
TSM4N60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance
Junction to Case
Thermal Resistance
Junction to Ambient
Notes: Surface mounted on FR4 board t
≤
10sec
TO-220 / TO-251 / TO-252
ITO-220
TO-220 / ITO-220
TO-251 / TO-252
Symbol
RӨ
JC
RӨ
JA
Limit
1.78
5
62.5
100
Unit
o
C/W
C/W
o
Electrical Specifications
(Ta=25
o
C, unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. Essentially Independent of Operating Temperature.
c.
V
DD
= 50V, I
AS
=4A, L=27.5mH, R
G
=25 , Starting T
J
= 25 C
o
Conditions
V
GS
= 0V, I
D
= 250uA
V
DS
= 600V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
= 10V, I
D
= 2A
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Min
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
2
15
2.8
6.2
545
60
8
10
35
45
40
--
--
--
300
2.2
Max
--
10
±100
4.0
2.5
20
--
--
710
80
11
30
80
100
90
4
16
1.4
--
--
Unit
V
uA
nA
V
V
DS
= 480V, I
D
= 4A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
V
GS
= 10V, I
D
= 4A,
V
DD
= 300V, R
G
= 25
nS
Integral Reverse p-n Junction
Diode in the MOSFET
I
S
= 4A, V
GS
= 0V
I
S
= 4A, V
GS
= 0V
dl
F
/dt=100A/us
I
S
I
SM
V
SD
t
rr
Q
rr
A
V
nS
uC
d. Pulse width limited by junction temperature
e. I
SD
≤
4A, di/dt
≤
200A/us, V
DD
≤
B
VDSS
) Starting T
J
=25ºC
2/11
Version: D10
TSM4N60
600V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
E
AS
Test Circuit & Waveform
3/11
Version: D10
TSM4N60
600V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/11
Version: D10
TSM4N60
600V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25ºC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5/11
Version: D10
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