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TSM1N80SCTA3: 产品描述0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET; 产品类别分立半导体晶体管; 文件大小275KB，共9页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/

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TSM1N80SCTA3概述

0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET

	TSM1N80SCTA3	TSM1N80CWRP	TSM1N80SCTB0
描述	0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET	0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET	0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET
包装说明	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G4	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow	compli	unknow
ECCN代码	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	90 mJ	90 mJ	90 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	800 V	800 V	800 V
最大漏极电流 (ID)	0.3 A	0.3 A	0.3 A
最大漏源导通电阻	21.6 Ω	21.6 Ω	21.6 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	O-PBCY-T3	R-PDSO-G4	O-PBCY-T3
元件数量	1	1	1
端子数量	3	4	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	RECTANGULAR	ROUND
封装形式	CYLINDRICAL	SMALL OUTLINE	CYLINDRICAL
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	1 A	1 A	1 A
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	YES	NO
端子形式	THROUGH-HOLE	GULL WING	THROUGH-HOLE
端子位置	BOTTOM	DUAL	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
JEDEC-95代码	TO-92	-	TO-92