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SMS190

产品描述1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB
产品类别半导体    分立半导体   
文件大小153KB,共2页
制造商BILIN
官网地址http://www.galaxycn.com/
下载文档 详细参数 选型对比 全文预览

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SMS190概述

1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB

1 A, 60 V, 硅, 信号二极管, DO-213AB

SMS190规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述ROHS COMPLIANT, PLASTIC, MELF-2
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
表面贴装Yes
端子形式WRAP AROUND
端子涂层NOT SPECIFIED
端子位置END
包装材料PLASTIC/EPOXY
工艺SCHOTTKY
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
二极管类型SIGNAL DIODE
最大重复峰值反向电压60 V
最大平均正向电流1 A

文档预览

下载PDF文档
BL
FEATURES
GALAXY ELECTRICAL
SMS120---SMS1A0
REVERSE VOLTAGE: 20 ---
100
V
CURRENT:
1.0
A
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
Plastic package has Underwriters Laborator
111
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
DO - 213AB
SOLDERABLE ENDS
D2=D1
0
0.20
D1
2.6± 0.15
High surge capability
High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequency inverters,free
111
wheeling and polarity protection applications
Guardring for overvoltage protection
o
High temperature soldering guaranteed:250 C/10
1
11
seconds at terminals
D2
0.5± 0.1
4.9± 0.2
0.5± 0.1
MECHANICAL DATA
Case:JEDEC DO-213AB,molded plastic over
1111passivated
chip
Terminals:Solder Plated, solderable per MIL-STD-750,
1111Method
2026
Polarity: Color band denotes cathode end
Weight:
0.0046 ounces, 0.116 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
SMS120
SMS130 SMS140
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
c
T
L
(SEE FIG.1) (NOTE 2)
Peak forw ard surge current 8.3ms single half-
c
sine-w ave superimposed on rated load(JEDEC
c
Method)
Maximum instantaneous forw ard voltage at
v
1.0A(NOTE.1)
Maximum DC reverse current @T
A
=25
o
C
at rated DC blocking voltage(NOTE1) @T
A
=100 C
Typical thermal resitance (NOTE2)
Operating junction and storagetemperature range
Storage temperature range
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm
2
)copper pad areas
o
SMS160 SMS190 SMS1A0
UNITS
60
42
60
90
63
90
100
70
100
V
V
V
A
A
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JA
R
θ
JL
T
STG
T
J
20
14
20
30
21
30
40
28
40
1.0
30
0.5
0.5
0.7
0.79
V
mA
5.0
45
15
K
/W
o
o
-55--- +150
-55--- +150
C
C
www.galaxycn.com
Document Number 0281050
BL
GALAXY ELECTRICAL
1.

SMS190相似产品对比

SMS190 SMS120 SMS130 SMS140 SMS160 SMS1A0
描述 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB
端子数量 2 2 2 2 2 2
元件数量 1 1 1 1 1 1
加工封装描述 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2 ROHS COMPLIANT, PLASTIC, MELF-2
无铅 Yes Yes Yes Yes Yes Yes
欧盟RoHS规范 Yes Yes Yes Yes Yes Yes
状态 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
包装形状 ROUND ROUND ROUND ROUND ROUND ROUND
包装尺寸 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
表面贴装 Yes Yes Yes Yes Yes Yes
端子形式 WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
端子涂层 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
端子位置 END END END END END END
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
工艺 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
结构 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
壳体连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE
最大重复峰值反向电压 60 V 60 V 60 V 60 V 60 V 60 V
最大平均正向电流 1 A 1 A 1 A 1 A 1 A 1 A

 
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