HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC342LC4 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military End-Use
Features
Noise Figure: 3.5 dB
Gain: 22 dB
Single Positive Supply: +3V @ 43 mA
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
Functional Diagram
General Description
The HMC342LC4 is a GaAs PHEMT MMIC Low
Noise Amplifier housed in a leadless 4x4 mm RoHS
compliant SMT package. Operating from 13 to 25
GHz, the amplifier provides 22 dB of gain and +19
dBm of output IP3 from a single +3V supply. The
low noise figure performance of 3.5 dB is ideal for
receive and transmit pre-driver applications. The RF
I/Os are DC blocked and matched to 50 Ohms for
ease of use. The HMC342LC4 allows the use of
surface mount manufacturing techniques and requires
no external matching components.
Electrical Specifi cations,
T
A
= +25° C, Vdd = +3V, Idd = 43 mA
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd) (Vdd = +3V)
19
Min.
Typ.
13 - 18
22
0.025
3.5
15
15
7
9
16
43
0.035
4.0
17
Max.
Min.
Typ.
18 - 22
20
0.025
3.5
15
20
8
11
19
43
0.035
4.0
16
Max.
Min.
Typ.
22 - 25
19
0.025
3.5
10
15
9
11.5
20
43
0.035
4.5
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
8 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
S21
S11
S22
Gain vs. Temperature
28
25
22
GAIN (dB)
19
16
13
10
+25 C
+85 C
-40 C
8
LOW NOISE AMPLIFIERS - SMT
8 - 33
5
0
-5
-10
-15
-20
-25
-30
8
10
12
14
16
18
20
22
24
26
28
30
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Noise Figure vs. Temperature
10
+25 C
+85 C
-40 C
Output IP3 vs. Temperature
24
22
20
IP3 (dBm)
18
16
14
8
NOISE FIGURE (dB)
6
4
2
12
0
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
10
12
14
16
18
20
+25 C
+85 C
-40 C
22
24
26
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
LOW NOISE AMPLIFIERS - SMT
P1dB vs. Temperature
14
12
10
P1dB (dBm)
8
6
4
2
0
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Psat vs. Temperature
14
12
10
Psat (dBm)
8
6
4
2
0
12
14
16
18
20
22
24
26
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Power Compression @ 20 GHz
24
Pout (dBm), GAIN (dB), PAE (%)
19
14
9
4
-1
-6
-26
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
Pout
Gain
PAE
-20
-30
-40
-50
-60
+25 C
+85 C
-40 C
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
12
14
16
18
20
22
24
26
INPUT POWER (dBm)
FREQUENCY (GHz)
Gain, Power & Noise Figure
vs. Supply Voltage @ 20 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), NOISE FIGURE (dB)
24
20
16
12
8
4
0
2.7
Gain
P1dB
Psat
Noise Figure
3
Vdd Supply Voltage (Vdc)
3.3
8 - 34
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.7
+3.0
+3.3
Idd (mA)
42
43
44
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 3.62 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
0 dBm
175 °C
0.326 W
276 °C/W
-65 to +150 °C
-40 to +85 °C
8
LOW NOISE AMPLIFIERS - SMT
8 - 35
Note: Amplifier will operate over full voltage ranges shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC342LC4
v03.0409
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
8
LOW NOISE AMPLIFIERS - SMT
Pin Descriptions
Pin Number
1, 5 - 14,
N/C
18 - 20, 22 - 24
2, 4, 15, 17
GND
Function
Description
No connection required. These pins may be connected to
RF/DC ground without affecting performance.
Package base has an exposed metal ground that must
also be connected to RF/DC ground.
This pin is AC coupled
and matched to 50 Ohms.
This pin is AC coupled
and matched to 50 Ohms.
Interface Schematic
3
16
RFIN
RFOUT
21
Vdd
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1000pF, and 2.2
μ
F are required.
Application Circuit
Component
C1
C2
C3
Value
100 pF
1,000 pF
2.2 μF
8 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
