HMC668LP3
/
668LP3E
v03.0610
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - 1200 MHz
Features
Noise figure: 0.9 dB
output ip3: +33 dBm
Gain: 16 dB
failsafe operation:
Bypass is enabled when lNA is unpowered
single supply: +3V or +5V
16 lead 3x3mm QfN package: 9 mm
2
7
Amplifiers - low Noise - smT
Typical Applications
The HmC668lp3(e) is ideal for:
• Cellular/3G and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• Tower mounted Amplifiers
• Test & measurement equipment
Functional Diagram
General Description
The HmC668lp3(e) is a versatile, high dynamic range
GaAs mmiC low Noise Amplifier that integrates a low
loss lNA bypass mode on the iC. The amplifier is ide-
al for receivers and lNA modules operating between
0.7 and 1.2 GHz and provides 0.9 dB noise figure,
16 dB of gain and +33 dBm ip3 from a single supply
of +5V @ 57mA. input and output return losses are
excellent and no external matching components are
required. A single control line is used to switch be-
tween lNA mode and a low loss bypass mode. The
failsafe topology enables the lNA bypass path, when
no DC power is available. The HmC668lp3(e) offers
improved noise figure versus the previously released
HmC373lp3(e).
Electrical Specifications,
T
A
= +25° C, Rbias = 0 Ohm
lNA mode
parameter
min.
frequency range
Gain
Gain Variation over Temperature
Noise figure
input return loss
output return loss
reverse isolation
power for 1dB Compression
(p1dB)
[1]
Third order intercept (ip3)
[2]
supply Current (idd)
switching speed (90% -10%)
lNA mode to Bypass mode
Bypass mode to lNA mode
200
85
85
-
ns
ns
12
Vdd = +3V
Typ.
0.7 - 1.2
15
0.03
0.85
12
13
22
13
27
32
40
1.1
13
max.
min.
Vdd = +5V
Typ.
0.7 - 1.2
16
0.016
0.9
13
14
23
13
33
57
70
1.1
12
13
-
22
26
0.05
12
13
-
24
26
-
-2.5
max.
Bypass mode
min.
Typ.
0.7 - 1.2
-1.5
0.0008
-2.5
max.
failsafe mode
min.
Typ.
0.7 - 1.2
-1.5
0.0008
max.
GHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
mA
Units
[1] p1dB for lNA mode is referenced to rfoUT while p1dB for Bypass and failsafe modes are referenced to rfiN.
[2] ip3 for lNA mode is referenced to rfoUT while ip3 for Bypass and failsafe modes are referenced to rfiN.
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC668LP3 / 668LP3E
v03.0610
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - 1200 MHz
LNA - Gain vs. Temperature
[1]
22
20
18
+25C
+85C
-40C
LNA - Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
Vdd=5V
Vdd=3V
S22
S21
7
Amplifiers - low Noise - smT
IP3 (dBm)
0
-5
-10
-15
-20
-25
0.2
0.4
0.6
GAIN (dB)
1.8
2
5
16
14
12
S11
0.8
1
1.2
1.4
FREQUENCY (GHz)
1.6
10
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
LNA - Gain vs. Temperature
[2]
22
20
18
GAIN (dB)
16
14
12
10
0.6
+25C
+85C
-40C
LNA - Return Loss vs. Temperature
[1]
0
+25C
+85C
-40C
-5
RETURN LOSS (dB)
Output Return Loss
-10
-15
Input Return Loss
-20
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
-25
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FREQUENCY (GHz)
LNA - Noise Figure vs. Temperature
2
1.7
NOISE FIGURE (dB)
1.4
1.1
0.8
0.5
-40C
Vdd=5V
Vdd=3V
+85C
[3]
LNA - Output IP3 vs.
Temperature, Output Power @ 0 dBm
48
43
38
IP3 (dBm)
33
Vdd=3V
Vdd=5V
42
37
32
27
22
+25C
+85C
-40C
+25C
28
23
18
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
0.6
0.7
0.8
0.9
1
1.1
1.2
Frequency (GHz)
17
12
1.3
0.2
[1] Vdd = 5V
[2] Vdd = 3V
[3] measurement reference plane shown on evaluation pCB drawing.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-2
HMC668LP3 / 668LP3E
v03.0610
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - 1200 MHz
LNA - Output P1dB vs. Temperature
[2]
20
18
16
P1dB (dBm)
14
12
10
8
6
+25C
+85C
-40C
7
Amplifiers - low Noise - smT
LNA - Output P1dB vs. Temperature
[1]
20
18
16
P1dB (dBm)
14
12
10
8
6
4
0.6
0.7
0.8
+25C
+85C
-40C
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
4
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
LNA - Gain, P1dB,
Output IP3 vs. Current
[1]
@ 900 MHz
18
Gain
46
LNA - Gain, P1dB,
Output IP3 vs. Current
[2]
@ 900 MHz
16
Gain
GAIN (dB) , P1dB (dBm)
42
14
36
40
GAIN (dB) , P1dB (dBm)
16
14
P1dB
12
38
12
P1dB
10
32
IP3 (dBm)
IP3 (dBm)
34
28
10
IP3
8
35
40
45
Idd (mA)
50
55
30
8
IP3
24
26
60
6
15
20
25
Idd (mA)
30
20
35
LNA - Reverse Isolation vs. Temperature
[1]
-10
-15
ISOLATION (dB)
-20
-25
-30
-35
-40
0.6
+25C
+85C
-40C
LNA - Output P1dB, Gain &
Noise Figure
[3]
vs. Vdd @ 900 MHz
20
1.1
GAIN (dB) & P1dB (dBm)
18
P1dB
Gain
1
NOISE FIGURE (dB)
16
0.9
14
0.8
12
NF
0.7
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
10
3
3.5
4
Voltage Supply (V)
4.5
5
0.6
[1] Vdd = 5V
[2] Vdd = 3V
[3] measurement reference plane shown on evaluation pCB drawing.
7-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC668LP3 / 668LP3E
v03.0610
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - 1200 MHz
Bypass Mode -
Input IP3 vs. Output Power @ 900 MHz
40
+25C
+85C
-40C
Bypass Mode -
Broadband Gain & Return Loss
0
-2
-4
RESPONSE (dB)
-6
-8
-10
-12
-14
-16
-18
-20
0.2
0.4
0.6
0.8
1
1.2
1.4
FREQUENCY (GHz)
1.6
1.8
2
S21
S11
S22
7
Amplifiers - low Noise - smT
7-4
35
IP3 (dBm)
30
25
20
15
-10
-5
0
5
Pout (dBm)
10
15
Bypass Mode - Input IP3 vs. Temperature,
Output Power @ 5 dBm
36
+25C
+85C
-40C
Bypass Mode -
Insertion Loss vs. Temperature
0
32
-1
24
GAIN (dB)
IP3 (dBm)
28
-2
-3
+25C
+85C
-40C
20
-4
16
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
-5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FREQUENCY (GHz)
Bypass Mode -
Input Return Loss vs. Temperature
0
Bypass Mode -
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25C
+85C
-40C
-5
-10
-10
-15
+25C
+85C
-40C
-15
-20
-20
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FREQUENCY (GHz)
-25
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC668LP3 / 668LP3E
v03.0610
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - 1200 MHz
Failsafe Mode -
Input IP3 vs. Output Power @ 900 MHz
40
+25C
+85C
-40C
7
Amplifiers - low Noise - smT
Failsafe Mode -
Broadband Gain & Return Loss
0
-2
-4
RESPONSE (dB)
-6
-8
-10
-12
-14
-16
-18
-20
0.2
0.4
0.6
0.8
1
1.2
1.4
FREQUENCY (GHz)
1.6
1.8
2
S21
S11
S22
35
IP3 (dBm)
30
25
20
15
-10
-5
0
5
Pout (dBm)
10
15
Failsafe Mode - Input IP3 vs.
Temperature, Output Power @ 5 dBm
36
+25C
+85C
-40C
Failsafe Mode -
Insertion Loss vs. Temperature
0
32
-1
GAIN (dB)
IP3 (dBm)
28
-2
+25C
+85C
-40C
24
-3
20
-4
16
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
-5
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
Failsafe Mode -
Input Return Loss vs. Temperature
0
Failsafe Mode -
Output Return Loss vs. Temperature
0
+25C
+85C
-40C
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25C
+85C
-40C
-5
-10
-10
-15
-15
-20
-20
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
-25
0.6
0.7
0.8
0.9
1
1.1
FREQUENCY (GHz)
1.2
1.3
7-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
