VS-12TTS08SPbF High Voltage Series
Vishay Semiconductors
Phase Control SCR, 8 A
2
Anode
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
D
2
PAK
1
Cathode
3
Gate
• Designed and qualified for industrial level
APPLICATIONS
• Input rectification and crow-bar (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
PRODUCT SUMMARY
V
T
at 8 A
I
TSM
V
RRM
< 1.2 V
140 A
800 V
DESCRIPTION
The VS-12TTS08SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C,
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
Range
8 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
8
A
12.5
800
140
1.2
150
100
- 40 to 125
V
A
V
V/μs
A/μs
°C
UNITS
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
I
RRM
/I
DRM
AT 125 °C
mA
1.0
Document Number: 94499
Revision: 08-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-12TTS08SPbF High Voltage Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak one-cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Typical holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
TEST CONDITIONS
T
C
= 108 °C, 180° conduction, half sine wave
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
I
2
√t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
t = 0.1 ms to 10 ms, no voltage reapplied, T
J
= 125 °C
8 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
VALUES
8
12.5
A
120
140
72
100
1000
1.2
16.2
0.87
0.05
V
R
= Rated V
RRM
/V
DRM
1.0
mA
30
50
150
100
V/μs
A/μs
A
2
√s
V
mΩ
V
A
2
s
UNITS
Phase Control SCR, 8 A
I
2
t
Anode supply = 6 V, resistive load, initial I
T
= 1 A
Anode supply = 6 V, resistive load
T
J
= 25 °C
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 65 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 65 °C
Maximum required DC gate voltage to trigger
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
W
2.0
1.5
10
20
15
10
1.2
1
V
0.7
0.2
0.1
mA
mA
A
V
UNITS
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.8
3
100
μs
UNITS
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94499
Revision: 08-Jun-10
VS-12TTS08SPbF High Voltage Series
Phase Control SCR, 8 A
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
0.07
minimum
Mounting torque
maximum
Marking device
Case style D
2
PAK (SMD-220)
12 (10)
6 (5)
oz.
kgf
⋅
cm
(lbf
⋅
in)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 125
1.5
62
0.5
2
g
°C/W
UNITS
°C
12TTS08S
Maximum Allowable Case T
emperature (°C)
12T 08
TS
R
thJC
(DC) = 1.5 K/ W
120
Maximum Average On-state Power Loss (W)
125
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
Average On-state Current (A)
Conduction Angle
180°
120°
90°
60°
30°
R Limit
MS
115
Conduc tion Angle
110
30°
105
60°
90°
120°
180°
100
0
2
4
6
8
10
Average On-state Current (A)
12T S
T 08
T
J
= 125°C
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case T
emperature (°C)
12T S
T 08
R
thJC
(DC) = 1.5 K/ W
Maximum Average On-state Power Loss (W)
125
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
Average On-state Current (A)
DC
180°
120°
90°
60°
30°
R Limit
MS
Conduction Period
120
115
Conduction Period
110
30°
60°
90°
120°
180°
DC
12
14
105
12T S
T 08
T
J
= 125°C
100
0
2
4
6
8
10
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94499
Revision: 08-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-12TTS08SPbF High Voltage Series
Vishay Semiconductors
Phase Control SCR, 8 A
Peak Half S Wave On-state Current (A)
ine
Peak Half S Wave On-state Current (A)
ine
130
120
110
100
90
80
70
60
1
At Any R
ated Load Condition And With
R
ated V
RRM
Applied F
ollowing S
urge.
150
140
130
120
110
100
90
80
70
60
Initial T
J
= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Maximum Non R
epetitive S
urge Current
Versus Puls T
e rain Duration. Control
Of Conduction May Not B Maintained.
e
Initial T
J
= 125°C
No Voltage R
eapplied
R
ated V
RRM
R
eapplied
12T S
T 08
12T S
T 08
10
100
50
0.01
0.1
Puls T
e rain Duration (s
)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
12T S
T 08
100
10
T
J
= 25°C
T
J
= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(°C/W)
10
S
teady S
tate Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
S
ingle Pulse
12T S
T 08
0.01
0.0001
0.1
0.001
0.01
S
quare Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94499
Revision: 08-Jun-10
VS-12TTS08SPbF High Voltage Series
Phase Control SCR, 8 A
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
12
2
-
-
-
-
-
-
-
-
T
3
T
4
S
5
08
6
S
7
TRL PbF
8
9
HPP product suffix
Current rating (12.5 A)
Circuit configuration:
T = Single thyristor
Package:
T = TO-220AC
Type of silicon:
S = Standard recovery rectifier
Voltage rating (08 = 800 V)
S = TO-220 D
2
PAK (SMD-220) version
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Document Number: 94499
Revision: 08-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
