VS-80EBU04
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Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
Cathode
Anode
• Designed and
JEDEC-JESD47
qualified
according
to
• Compliant to RoHS Directive 2002/95/EC
• PowerTab
®
package
PowerTab
®
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
PowerTab
®
80 A
400 V
1.3 V
See recovery table
175 °C
Single die
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and
storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 101 °C
T
C
= 25 °C
Square wave, 20 kHz
TEST CONDITIONS
MAX.
400
80
800
160
- 55 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
r
TEST CONDITIONS
I
R
= 100 μA
I
F
= 80 A
Forward voltage
V
F
I
F
= 80 A, T
J
= 175 °C
I
F
= 80 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
-
-
-
-
MIN.
400
-
-
TYP.
-
1.1
0.92
0.98
-
-
50
3.5
MAX.
-
1.3
1.08
1.15
50
2
-
-
μA
mA
pF
nH
V
UNITS
Revision: 15-Jun-11
Document Number: 93025
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80EBU04
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 80 A
V
R
= 200 V
dI
F
/dt = 200 A/μs
MIN.
-
-
-
-
-
-
-
TYP.
50
87
151
9.3
17.2
405
1300
MAX.
60
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
Weight
Mounting torque
Marking device
Case style PowerTab
®
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-
-
-
-
1.2
(10)
TYP.
-
0.2
-
0.18
-
MAX.
0.70
K/W
-
5.02
-
2.4
(20)
80EBU04
g
oz.
N·m
(lbf · in)
UNITS
Revision: 15-Jun-11
Document Number: 93025
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80EBU04
www.vishay.com
Vishay Semiconductors
1000
T
J
= 175˚C
Reverse Current - I
R
(µA)
1000
100
125˚C
10
1
0.1
0.01
25˚C
Instantaneous Forward Current - I
F
(A)
100
T = 175˚C
J
J
J
0.001
0
100
200
300
400
Reverse Voltage - V
R
(V)
T = 125˚C
T = 25˚C
Fig. 1 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Junction Capacitance - C
T
(pF)
10
T
J
= 25˚C
100
1
0
0.5
1
1.5
2
2.5
Forward Voltage Drop - V
FM
(V)
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Junction Capacitance vs.
Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
0.1
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 3 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 15-Jun-11
Document Number: 93025
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80EBU04
www.vishay.com
Vishay Semiconductors
250
Vr = 200V
Tj = 125˚C
Tj = 25˚C
180
Allowable Case Temperature (°C)
160
140
120
100
Square wave (D = 0.50)
80% Rated Vr applied
200
IF = 160A
IF = 80A
IF = 40A
trr ( ns )
DC
150
80
see note (1)
100
60
0
20
40
60
80
100
120
50
100
di
F
/dt (A/µs )
Average Forward Current - I
F
(AV)
(A)
1000
Fig. 2 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
4500
140
RMS Limit
Average Power Loss ( Watts )
4000
3500
3000
Qrr ( nC )
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Average Forward Current - I
F
(AV)
(A)
Vr = 200V
Tj = 125˚C
Tj = 25˚C
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
2500
2000
1500
1000
500
0
100
IF = 160A
IF = 80A
IF = 40A
1000
di
F
/dt (A/µs )
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 15-Jun-11
Document Number: 93025
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80EBU04
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Jun-11
Document Number: 93025
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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