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B120_09

产品描述1 A, 20 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小87KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
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B120_09概述

1 A, 20 V, SILICON, SIGNAL DIODE

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New Product
B120 thru B160
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
1.0 A
20 V to 60 V
30 A
0.52 V, 0.75 V
125 °C, 150 °C
For use in low voltage, high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
Note
• These devices are not AEC-Q101 qualified
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
- 65 to + 125
- 65 to + 150
SYMBOL
B120
B12
20
B130
B13
30
B140
B14
40
1.0
30
10 000
- 65 to + 150
B150
B15
50
B160
B16
60
V
A
A
V/μs
°C
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current at rated V
R
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Document Number: 88946
Revision: 13-Oct-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
TEST CONDITIONS
1.0 A
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
F (1)
I
R (2)
B120
B130
0.52
0.2
6.0
5.0
B140
B150
0.75
B160
UNIT
V
mA

B120_09相似产品对比

B120_09 B120 B130 B140 B150
描述 1 A, 20 V, SILICON, SIGNAL DIODE 1 A, 20 V, SILICON, SIGNAL DIODE 1 A, 30 V, SILICON, SIGNAL DIODE 1 A, 40 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
是否Rohs认证 - 不符合 不符合 不符合 不符合
厂商名称 - Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
零件包装代码 - DO-214AC DO-214AC DO-214AC DO-214AC
包装说明 - R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
针数 - 2 2 2 2
Reach Compliance Code - unknow unknow unknow unknow
ECCN代码 - EAR99 EAR99 EAR99 EAR99
其他特性 - FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
配置 - SINGLE SINGLE SINGLE SINGLE
二极管元件材料 - SILICON SILICON SILICON SILICON
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 - DO-214AC DO-214AC DO-214AC DO-214AC
JESD-30 代码 - R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609代码 - e0 e0 e0 e0
元件数量 - 1 1 1 1
端子数量 - 2 2 2 2
最高工作温度 - 150 °C 150 °C 150 °C 150 °C
最低工作温度 - -65 °C -65 °C -65 °C -65 °C
最大输出电流 - 1 A 1 A 1 A 1 A
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 - 20 V 30 V 40 V 50 V
表面贴装 - YES YES YES YES
技术 - SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子面层 - TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 - C BEND C BEND C BEND C BEND
端子位置 - DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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