d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
www.vishay.com
1
New Product
Si4178DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 6.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 6.7 A, V
GS
= 0 V
0.85
15
8
8.5
6.5
T
C
= 25 °C
4.2
40
1.2
30
16
A
V
ns
nC
ns
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 2.2
Ω
I
D
≅
6.7 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 2.2
Ω
I
D
≅
6.7 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.5
V
DS
= 15 V, V
GS
= 10 V, I
D
= 8.4 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8.4 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 8.4 A
V
GS
=
4.5 V, I
D
= 2 A
V
DS
= 15 V, I
D
= 8.4 A
20
0.017
0.027
22
405
110
56
7.5
3.7
1.6
1.3
2.6
20
15
11
10
7
10
12
10
5.2
30
25
20
15
15
15
20
15
ns
Ω
12
5.6
nC
pF
0.021
0.033
1.4
30
25
-6
2.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
New Product
Si4178DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
10
V
GS
= 10 V thru 6 V
30
I
D
- Drain Current (A)
V
GS
= 5 V
I
D
- Drain Current (A)
8
6
T
C
= 25 °C
4
20
10
V
GS
= 4 V
V
GS
= 3 V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
2
T
C
= 125 °C
T
C
= - 55 °C
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.14
0.12
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.10
0.08
V
GS
= 4.5 V
0.06
0.04
0.02
0.00
0
5
10
15
20
25
30
35
40
V
GS
= 10 V
600
Transfer Characteristics
500
C
iss
400
300
200
C
oss
100
C
rss
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 8.4 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
V
DS
= 7.5 V
6
V
DS
= 24 V
4
R
DS(on)
- On-Resistance
1.4
1.6
Capacitance
V
GS
= 10 V; I
D
= 8.4 A
(Normalized)
1.2
1.0
V
GS
= 4.5 V; I
D
= 8.4 A
2
0.8
0
0
2
4
6
8
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
www.vishay.com
3
New Product
Si4178DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.050
0.045
R
DS(on)
- On-Resistance (Ω)
0.040
I
D
= 2 A; T
J
= 125 °C
0.035
0.030
0.025
0.020
0.015
1
0.0
0.010
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
I
D
= 8.4 A; T
J
= 25 °C
I
D
= 8.4 A; T
J
= 125 °C
I
S
- Source Current (A)
T
J
= 150 °C
10
T
J
= 25 °C
I
D
= 2 A; T
J
= 25 °C
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
- 50
5
Power (W)
V
GS(th)
(V)
I
D
= 250 μA
20
30
On-Resistance vs. Gate-to-Source Voltage
25
15
10
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
T
A
= 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.1
100 ms
1s
10 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
New Product
Si4178DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
5
12
I
D
- Drain Current (A)
Package Limited
Power (W)
9
4
3
6
2
3
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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