d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 73664
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
1
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
38
20
Maximum
50
25
Unit
°C/W
New Product
Si4436DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 4.6 A
V
GS
= 4.5 V, I
D
= 4.2 A
V
DS
= 15 V, I
D
= 4.6 A
Min.
60
Typ.
Max.
Unit
V
55
- 6.3
1.5
2.5
± 100
1
10
25
0.030
0.035
20
1100
0.036
0.043
mV/°C
V
nA
µA
A
Ω
S
V
DS
= 30 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 4.6 A
V
DS
= 30 V, V
GS
= 4.5 V, I
D
= 4.6 A
f = 1 MHz
V
DD
= 30 V, R
L
= 5.4
Ω
I
D
≅
5.6 A, V
GEN
= 4.5 V, R
g
= 1
Ω
90
55
21
10.5
3.5
4.2
3.3
20
150
20
60
10
5
30
225
30
90
15
25
40
15
4.2
25
0.8
25
25
19
6
1.2
50
50
32
16
pF
nC
Ω
ns
V
DD
= 30 V, R
L
= 5.4
Ω
I
D
≅
5.6 A, V
GEN
= 10 V, R
g
= 1
Ω
15
25
10
T
C
= 25 °C
I
S
= 2 A
A
V
ns
nC
ns
I
F
= 5.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73664
S09-0322-Rev. B, 02-Mar-09
New Product
Si4436DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
V
GS
= 10
V
thru 4
V
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
I
D
= 25 °C
3
5
T
C
= – 55 °C
15
10
2
I
D
= 125 °C
5
V
GS
= 3
V
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.040
1500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
1200
0.036
V
GS
= 4.5
V
C - Capacitance (pF)
900
C
iss
0.032
V
GS
= 10
V
600
0.028
300
C
oss
0.024
0
5
10
15
20
25
0
0
C
rss
10
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 4.6 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
1.6
(Normalized)
1.4
1.2
1.0
0.8
0
0
5
10
15
20
25
0.6
- 50
V
DS
= 30
V
2.0
1.8
Capacitance
V
GS
= 10
V,
I
D
= 4.6 A
6
4
V
DS
= 48
V
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73664
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
3
New Product
Si4436DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.08
I
D
= 4.6 A
0.07
T
J
= 150 °C
I
S
- Source Current (A)
10
0.06
125 °C
0.05
0.04
T
J
= 25 °C
0.03
25 °C
0.02
0
2
4
6
8
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.6
2.4
2.2
Power (W)
50
On-Resistance vs. Gate-to-Source Voltage
I
D
= 250
µA
40
V
GS(th)
(V)
2.0
1.8
1.6
1.4
30
20
10
1.2
1.0
- 50
- 25
0
25
50
75
100
125
150
0
10
-3
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100
µs
1
1 ms
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
100
0.01
0.1
1
10
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
Document Number: 73664
S09-0322-Rev. B, 02-Mar-09
New Product
Si4436DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
12
5
4
9
I
D
- Drain Current (A)
Power (W)
3
Package Limited
6
2
3
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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