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SI7460DP_09

产品描述11 A, 60 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET
产品类别半导体    分立半导体   
文件大小335KB,共12页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

SI7460DP_09概述

11 A, 60 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET

11 A, 60 V, 0.0096 ohm, N沟道, 硅, POWER, 场效应管

SI7460DP_09规格参数

参数名称属性值
端子数量5
最小击穿电压60 V
加工封装描述ROHS COMPLIANT, POWERPAK, SOP-8
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式C BEND
端子涂层MATTE TIN
端子位置DUAL
包装材料UNSPECIFIED
结构SINGLE WITH BUILT-IN DIODE
壳体连接DRAIN
元件数量1
晶体管应用SWITCHING
晶体管元件材料SILICON
通道类型N-CHANNEL
场效应晶体管技术METAL-OXIDE SEMICONDUCTOR
操作模式ENHANCEMENT
晶体管类型GENERAL PURPOSE POWER
最大漏电流11 A
额定雪崩能量125 mJ
最大漏极导通电阻0.0096 ohm
最大漏电流脉冲40 A

文档预览

下载PDF文档
Si7460DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
(Ω)
0.0096 at V
GS
= 10 V
0.012 at V
GS
= 4.5 V
I
D
(A)
18
16
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
PowerPAK SO-8
6.15 mm
S
1
2
3
S
S
5.15 mm
G
4
D
D
8
7
6
5
D
D
D
G
Bottom View
Ordering Information:
Si7460DP-T1-E3 (Lead (Pb)-free)
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b,c
a
Symbol
V
DS
V
GS
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
I
S
I
AS
E
AS
T
A
= 25 °C
T
A
= 70 °C
P
D
T
J
, T
stg
10 s
Steady State
60
± 20
Unit
V
18
14
40
4.3
50
125
5.4
3.4
- 55 to 150
260
11
8
A
1.6
mJ
1.9
1.2
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
1

SI7460DP_09相似产品对比

SI7460DP_09 SI7460DP
描述 11 A, 60 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET 11 A, 60 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET
端子数量 5 5
最小击穿电压 60 V 60 V
加工封装描述 ROHS COMPLIANT, POWERPAK, SOP-8 ROHS COMPLIANT, POWERPAK, SOP-8
无铅 Yes Yes
欧盟RoHS规范 Yes Yes
状态 ACTIVE ACTIVE
包装形状 RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes
端子形式 C BEND C BEND
端子涂层 MATTE TIN MATTE TIN
端子位置 DUAL DUAL
包装材料 UNSPECIFIED UNSPECIFIED
结构 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
壳体连接 DRAIN DRAIN
元件数量 1 1
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
通道类型 N-CHANNEL N-CHANNEL
场效应晶体管技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
操作模式 ENHANCEMENT ENHANCEMENT
晶体管类型 GENERAL PURPOSE POWER GENERAL PURPOSE POWER
最大漏电流 11 A 11 A
额定雪崩能量 125 mJ 125 mJ
最大漏极导通电阻 0.0096 ohm 0.0096 ohm
最大漏电流脉冲 40 A 40 A

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