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CMLT3474G

产品描述Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PICOMINI-6
产品类别分立半导体    晶体管   
文件大小465KB,共2页
制造商Central Semiconductor
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CMLT3474G概述

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PICOMINI-6

CMLT3474G规格参数

参数名称属性值
厂商名称Central Semiconductor
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)1 A
集电极-发射极最大电压25 V
配置SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)50
JESD-30 代码R-PDSO-F6
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN AND PNP
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz

文档预览

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CMLT3410 CMLT3410G* NPN
CMLT7410 CMLT7410G* PNP
CMLT3474 CMLT3474G* NPN/PNP
SURFACE MOUNT PICOmini™
DUAL LOW VCE(SAT)
SILICON TRANSISTORS
Central
DESCRIPTION:
TM
Semiconductor Corp.
These dual devices are low VCE(SAT) silicon
transistors in a PICOmini™ surface mount package
designed for small signal general purpose amplifier
and switching applications requiring low collector
emitter saturation voltage.
MARKING CODES:
CMLT3410: C34
CMLT7410: C74
CMLT3474: C37
CMLT3410G: 34G
CMLT7410G: 74G
CMLT3474G: 37G
SOT-563 CASE
*
Device is
Halogen Free
by design
MAXIMUM RATINGS:
(TA=25
o
C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
Θ
JA
40
25
6.0
1.0
1.5
350
-65 to +150
357
UNITS
V
V
V
A
A
mW
C
C/W
o
o
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25
o
C unless otherwise noted)
TYP
SYMBOL
TEST CONDITIONS
MIN
NPN
PNP
MAX
ICBO
VCB=40V
100
IEBO
VEB=6.0V
100
BVCBO
IC=100μA
40
BVCEO
IC=10mA
25
BVEBO
IE=100μA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
20
25
50
VCE(SAT)
IC=100mA, IB=10mA
35
40
75
VCE(SAT)
IC=200mA, IB=20mA
75
80
150
VCE(SAT)
IC=500mA, IB=50mA
130
150
250
VCE(SAT)
IC=800mA, IB=80mA
200
220
400
VCE(SAT)
IC=1.0A, IB=100mA
250
275
450
VBE(SAT)
IC=800mA, IB=80mA
1.1
VBE(ON)
VCE=1.0V, IC=10mA
0.9
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
300
100
hFE
VCE=1.0V, IC=500mA
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz (CMLT3410)
10
Cob
VCB=10V, IE=0, f=1.0MHz (CMLT7410)
15
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
pF
R1 (7-April 2009)

CMLT3474G相似产品对比

CMLT3474G CMLT3474TR CMLT3474GTR CMLT7410BK CMLT7410G CMLT3410BK CMLT3474BK CMLT3410G CMLT3410TR CMLT7410TR
描述 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PICOMINI-6 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PICOMINI-6 Small Signal Bipolar Transistor, 1A I(C), NPN and PNP Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PICOMINI-6 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, PICOMINI-6 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PICOMINI-6 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PICOMINI-6 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, PICOMINI-6 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PICOMINI-6 Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PICOMINI-6
Reach Compliance Code unknown compliant not_compliant compliant not_compliant compliant compliant not_compliant compliant compliant
最大集电极电流 (IC) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
最小直流电流增益 (hFE) 50 50 100 50 50 50 50 50 50 50
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
极性/信道类型 NPN AND PNP NPN AND PNP NPN/PNP PNP PNP NPN NPN AND PNP NPN NPN PNP
表面贴装 YES YES YES YES YES YES YES YES YES YES
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
厂商名称 Central Semiconductor - - - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
包装说明 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 - SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
针数 6 6 - 6 6 6 6 6 6 6
ECCN代码 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
集电极-发射极最大电压 25 V 25 V - 25 V 25 V 25 V 25 V 25 V 25 V 25 V
配置 SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
JESD-30 代码 R-PDSO-F6 R-PDSO-F6 - R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
元件数量 2 2 - 2 2 2 2 2 2 2
端子数量 6 6 - 6 6 6 6 6 6 6
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
端子形式 FLAT FLAT - FLAT FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL - DUAL DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON - SILICON SILICON SILICON SILICON SILICON SILICON SILICON
最大功率耗散 (Abs) - 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W 0.35 W
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