TS512,A
HIGH SPEED PRECISION
DUAL OPERATIONAL AMPLIFIERS
.
.
.
.
.
.
.
.
LOW OFFSET VOLTAGE : 500µV max.
LOW POWER CONSUMPTION
SHORT CIRCUIT PROTECTION
LOW DISTORTION, LOW NOISE
HIGH GAIN-BANDWIDTH PRODUCT
HIGH CHANNEL SEPARATION
ESD INTERNAL PROTECTION
MACROMODEL
INCLUDED IN THIS
SPECIFICATION
DESCRIPTION
The TS512 is a high performance dual operational
amplifier with frequency and phase compensation
built intothe chip. The internal phasecompensation
allows stable operation as voltage follower in spite
of its high gain-bandwidth products.
The circuit presents very stable electrical charac-
teristics over the entire supply voltage range, and
is particularlyintended for professional and telecom
applications (active filter, etc).
PIN CONNECTIONS
(top view)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
ORDER CODES
Part Number
TS512I
TS512AI
Temperature Range
-40, +125
o
C
-40, +125 C
o
Package
N
•
•
D
•
•
Output 1 1
Inve rting Input 1 2
Non-inve rting Input 1 3
V
CC
-
4
8
V
+
CC
-
+
7
Output
Inve rting Input 2
Non-inve rting Input 2
-
+
6
5
March 1998
TS512,A
SCHEMATIC DIAGRAM
(1/2 TS512)
Inverting
input
Non-inverting
input
8
D7
D6
R1
R2
R3
R4
Q13
Q1
Q2
Q4
Q3
D1
Q5
Q6
R5
Q7
Q8
Q10
Q11
Q12
Q9
D2
R7
Q 18
R6
Q 14
O utput
Q17
Q19
C1
Q15
Q 16
D3
Q 21
D5
Q22
C2
D4
R8
R9
Q23
Q20
R10
4
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
i
V
id
T
oper
P
tot
T
j
T
stg
Supply Voltage
Input Voltage
Differential Input Voltage
Operating Free Air Temperature Range
Power Dissipation at T
amb
= 70
o
C
Junction Temperature
Storage Temperature Range
Parameter
Value
±18
±V
CC
±
(V
CC
- 1)
-40 to +125
500
150
-65 to +150
o
Unit
V
C
C
C
mW
o
o
2/7
TS512,A
ELECTRICAL CHARACTERISTICS
(V
CC
=
±15V,
T
amb
=
25
o
C, unless otherwise specified)
Symbol
I
CC
I
ib
R
i
V
io
Parameter
Supply Current
Input Bias Current
T
min.
< T
op
< T
max
.
Input Resistance
Input Offset Voltage
T
min
. < T
op
< T
max
.
DV
io
I
io
DI
io
I
os
A
vd
GBP
e
n
Input Offset Voltage Drift
Input Offset Current
T
min
. < T
op
< T
max
.
Input Offset Current Drift
Output Short Circuit Current
Large Signal Voltage Gain
Gain-bandwidth Product
Equivalent Input Noise Voltage
R
L
= 2kΩ
f = 100kHz
f = 1kHz
R
s
= 50Ω
R
s
= 1kΩ
R
s
= 10kΩ
A
V
= 20dB
V
O
= 2V
PP
R
L
= 2kΩ
R
L
= 10kΩ
Unity Gain, R
L
= 2kΩ
V
ic
= 10V
V
ic
= 1V
f = 1kHz
f = 100Hz
R
L
= 2kΩ
f = 1kHz
V
CC
=
±15V
V
CC
=
±4V
f = 10kHz
0.8
90
90
100
120
±13
V
CC
=
±15V
V
CC
=
±4V
90
1.8
T
min
. < T
op
< T
max
.
0.08
23
100
95
3
8
10
18
0.03
±3
28
1.5
15
T
min
. < T
op
< T
max
.
f = 1kHz
TS512
TS512A
TS512
TS512A
2
5
20
40
1
0.5
2.5
0.5
3.5
1.5
Test Conditions
Min.
Typ.
0.7
50
Max.
1.2
150
300
Unit
mA
nA
nA
MΩ
mV
mV
µV/
C
nA
nA
nA
o
°C
mA
dB
MHz
nV
Hz
√
%
V
V
PP
V/µs
dB
dB
dB
THD
±V
opp
V
opp
SR
CMR
SVR
V
O1
/V
O2
Total Harmonic Distortion
Output Voltage Swing
Large Signal Voltage Swing
Slew Rate
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Channel Separation
0.1
3/7
TS512,A
.
.
.
LOW OFFSET VOLTAGE : 500µV max.
LOW POWER CONSUMPTION
SHORT CIRCUIT PROTECTION
.
.
.
LOW DISTORTION, LOW NOISE
HIGH GAIN-BANDWIDTH PRODUCT
HIGH CHANNEL SEPARATION
Applies to : TS512I,AI
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIV E POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS512 1 3 2 4 5 (analog)
*************************************
*********************
.MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 2.600000E+01
RIN 15 16 2.600000E+01
RIS 11 15 1.061852E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0
VOFN 13 14 DC 0
IPOL 13 5 1.000000E-05
CPS 11 15 12.47E-10
DINN 17 13 MDTH 400E-12
VIN 17 5 1.500000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 1.500000E+00
FCP 4 5 VOFP 3.400000E+01
FCN 5 4 VOFN 3.400000E+01
FIBP 2 5 VOFN 1.000000E-02
FIBN 5 1 VOFP 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 9.000000E+02
FIN 5 19 VOFN 9.000000E+02
RG1 19 5 1.727221E+06
RG2 19 4 1.727221E+06
CC 19 5 6.000000E-09
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 6.521739E+03
VIPM 28 4 1.500000E+02
HONM 21 27 VOUT 6.521739E+03
VINM 5 27 1.500000E+02
GCOMP 5 4 4 5 6.485084E-04
RPM1 5 80 1E+06
RPM2 4 80 1E+06
GAVPH 5 82 19 80 2.59E-03
RAVPHGH 82 4 771
RAVPHGB 82 5 771
RAVPHDH 82 83 1000
RAVPHDB 82 84 1000
CAVPHH 4 83 0.331E-09
CAVPHB 5 84 0.331E-09
EOUT 26 23 82 5 1
VOUT 23 5 0
ROUT 26 3 6.498455E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.742230E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.742230E+00
.ENDS
4/7
TS512,A
ELECTRICAL CHARACTERISTICS
V
CC
=
±15V,
T
amb
= 25
o
C (unless otherwise specified)
Symbol
V
io
A
vd
I
CC
V
icm
V
OH
V
OL
I
sink
I
source
GBP
SR
∅m
R
L
= 2kΩ
R
L
= 2kΩ
V
O
= 0V
V
O
= 0V
R
L
= 2kΩ, C
L
= 100pF
R
L
= 2kΩ
R
L
= 2kΩ, C
L
= 100pF
R
L
= 2kΩ
No load, per operator
Conditions
Value
0
100
350
-13.5 to 13.5
+13
-13
23
23
3
1.4
55
Unit
mV
V/mV
µA
V
V
V
mA
mA
MHz
V/ms
Degrees
5/7
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