MMST3904
TRANSISTOR(NPN)
FEATURES
Complementary to MMST3906
MARKING:K2N
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
40
5
200
200
625
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–323
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
*
V
(BR)CEO
*
V
(BR)EBO
*
I
CBO
*
I
CEO
*
Test
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=40V, I
B
=0
V
CE
=1V, I
C
=100µA
DC current gain
h
FE
*
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
Collector-emitter saturation voltage
V
CE(sat)
*
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=20V,I
C
=10mA , f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
EB
=0.5V, I
E
=0, f=1MHz
V
CC
=3V, V
BE(off)
=0.5V I
C
=10mA,
I
B1
=1mA
V
CC
=3V, I
C
=10mA, I
B1
= I
B2
=1mA
300
4
8
35
35
225
75
40
70
100
60
0.25
0.3
0.85
0.95
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
300
conditions
Min
60
40
5
60
500
Typ
Max
Unit
V
V
V
nA
nA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector output capacitance
Delay time
Rise time
Storage time
Fall time
V
BE(sat)
*
f
T
C
ob
C
ib
t
d
t
r
t
s
t
f
*Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
DIY/开源硬件专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
