The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 April 2012.
INCH-POUND
MIL-PRF-19500/630F
27 January 2012
SUPERSEDING
MIL-PRF-19500/630E
19 December 2007
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON,
TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5,
JANTXV, R, AND F AND JANS, R, AND F
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, radiation hardened,
enhancement mode, MOSFET, power transistor. Two levels of product assurance are provided for each device type
as specified in
MIL-PRF-19500,
with avalanche energy ratings (E
AS
) and maximum avalanche current (I
AS
). See
6.4
for JANHC and JANKC die versions.
1.2 Physical dimensions. See
figure 1
(TO-205AF) and
figure 2
(LCC).
* 1.3 Maximum ratings. Unless otherwise specified, T
C
= +25°C.
Type
(1)
P
T
(2)
W
2N7389, 2N7389U,
2N7389U5
2N7390, 2N7390U,
2N7390U5
Type
(1)
25
25
P
T
R
θJC
(3)
T
A
= +25°C
(free air)
W
°C/W
0.8
0.8
5
5
Min V
(BR)DSS
V
GS
= 0 V
I
D
=-1 mA dc
V dc
-100
-200
I
D1
(4) (5)
T
C
= +25°C
A dc
-6.5
-4.0
I
D2
(4) (5)
T
C
= +100°C
A dc
-4.1
-2.4
T
J
and T
STG
V dc
-55 to +150
-55 to +150
I
S
A dc
I
DM
(6)
A (pk)
-26
-16
E
AS
mJ
165
171
I
AS
A dc
-6.5
-4.0
V
GS
V dc
±20
±20
2N7389, 2N7389U,
2N7389U5
2N7390, 2N7390U,
2N7390U5
See notes on next page.
-6.5
-4.0
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/630F
* (1)
(2)
(3)
(4)
Electrical characteristics, ratings, and conditions for "U" and “U5” suffix devices are identical to the
corresponding non "U" and “U5” suffix devices, unless otherwise specified.
Derate linearly 0.2 W/°C for T
C
> +25°C.
See
figure 3,
thermal impedance curves.
The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal
construction.
(5)
(6)
See
figure 4,
maximum drain current graph.
I
DM
= 4 x I
D1
as calculated in note 4.
* 1.4 Primary electrical characteristics. Unless otherwise specified, T
C
= +25°C.
Type
Min V
(BR)DSS
V
GS
= 0 V
I
D
= -1 mA dc
V
GS(th)1
V
DS
≥
V
GS
I
D
= -1 mA
V dc
2N7389, 2N7389U, 2N7389U5
2N7390, 2N7390U, 2N7390U5
(1) Pulsed, (see
4.5.1).
2. APPLICABLE DOCUMENTS
-100
-200
V dc
Min Max
-2.0
-4.0
-2.0
-4.0
Max I
DSS1
V
GS
= 0 V
V
DS
= 80
percent
of rated V
DS
µA
dc
-25
-25
Max r
DS(on)1
(1)
V
GS
= -12 V dc
I
D
= I
D2
T
J
= +25°C
ohms
0.30
0.80
T
J
= +150°C
ohms
0.60
1.68
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or
https://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/630F
Ltr
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
r
TL
TW
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.160
.180
4.06
4.57
.335
.370
8.51
9.39
.200 TP
5.08 TP
.016
.021
0.41
0.53
.500
.750
12.7
19.05
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.050
1.27
.010
0.25
.029
.045
0.74
1.14
.028
.034
0.71
0.86
45° TP
45° TP
Notes
6
7, 8
7, 8
7, 8
7, 8
7, 8
5
4
9
3
2
6
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
3. Dimension TL measured from maximum HD.
4. Outline in this zone is not controlled.
5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic
handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions for TO-205AF (2N7389, 2N7390).
3
MIL-PRF-19500/630F
Dimensions
Inches
Symbol
BL
BW
CH
LL1
LL2
LS
LS1
LS2
LW
Q1
Q2
Q3
TL
TW
Min
Max
.345
.360
.280
.295
.095
.115
.040
.055
.055
.065
.050 BSC
.025 BSC
.008 BSC
.020
.030
.105 REF
.120 REF
.045
.055
.070
.080
.120
.130
Millimeters
Min
Max
8.76
9.14
7.11
7.49
2.41
2.92
1.02
1.40
1.40
1.65
1.27 BSC
0.635 BSC
0.203 BSC
0.51
0.76
2.67 REF
3.05 REF
1.14
1.40
1.78
2.03
3.05
3.30
18
1
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
* FIGURE 2. Physical dimensions for LCC (2N7389U, 2N7389U5, 2N7390U, 2N7390U5).
4
MIL-PRF-19500/630F
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in
MIL-PRF-19500
and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see
4.2
and
6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
defined in
MIL-PRF-19500
and as follows:
I
AS
........Rated avalanche current, nonrepetitive
nC .......nano coulomb.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500,
and on
figures 1
and
2
herein.
3.4.1 Lead material and finish. Lead material shall be Kovar. Lead finish shall be solderable in accordance with
MIL-PRF-19500, MIL-STD-750,
and herein. Where a choice of lead finish is desired, it shall be specified in the
acquisition document (see
6.2).
3.4.2 Internal construction. Multiple chip construction shall not be permitted.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge
protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the
accumulation of static charge. The following handling procedures shall be followed:
a.
b.
c.
d.
e.
f.
g.
Devices shall be handled on benches with conductive handling devices.
Ground test equipment, tools, and personnel handling devices.
Do not handle devices by the leads.
Store devices in conductive foam or carriers.
Avoid use of plastic, rubber, or silk in MOS areas.
Maintain relative humidity above 50 percent, if practical.
Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to
any lead.
Gate must be terminated to source. R
≤
100 kΩ, whenever bias voltage is to be applied drain to source.
h.
3.6 Marking. Marking shall be in accordance with
MIL-PRF-19500.
At the option of the manufacturer, marking of
country of origin may be omitted from the body of the transistor, but shall be retained on the initial container.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in
1.3, 1.4,
and
table I.
3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in
table I.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
5
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