电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

20CTQ045-N3

产品描述20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小179KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 选型对比 全文预览

20CTQ045-N3概述

20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB

文档预览

下载PDF文档
VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 10 A
Base 2
common
cathode
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
Anode
TO-220AB
Anode
2
1 Common 3
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 10 A
35 V, 40 V, 45 V
0.57 V
15 mA at 125 °C
175 °C
Common cathode
13 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-20CTQ... center tap Schottky rectifier series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
10 A
pk
, T
J
= 125 °C (per leg)
Range
VALUES
20
35 to 45
1060
0.57
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC
reverse voltage
Maximum working
peak reverse
voltage
SYMBOL
V
R
35
V
RWM
35
40
40
45
45
V
VS-
VS-
VS-
VS-
VS-
VS-
UNITS
20CTQ035PbF 20CTQ035-N3 20CTQ040PbF 20CTQ040-N3 20CTQ045PbF 20CTQ045-N3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 145 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
1060
265
13
2.0
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 2.0 A, L = 6.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 25-Aug-11
Document Number: 94162
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

20CTQ045-N3相似产品对比

20CTQ045-N3 20CTQ035-N3 20CTQ035PBF_12 20CTQ040-N3
描述 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1589  2822  2058  551  79  58  48  34  10  50 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved