SJV01N60
Elektronische Bauelemente
1A , 600V , R
DS(ON)
10 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The high voltage MOSFET uses an advanced
termination scheme to provide enhanced voltage-blocking
capability without degrading performance over time. In addition,
this advanced MOSFET is designed to withstand high energy
in avalanche and commutation modes . The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power suppliers, converters and
PWM motor controls ,these devices are particularly well
suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional and safety
margin against unexpected voltage transients.
A
TO-92
D
B
E
C
F
G
H
J
1
Gate
2
Drain
3
Source
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
REF.
A
B
C
D
E
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
REF.
F
G
H
J
K
Millimeter
Min.
Max.
0.30
0.51
1.27 TYP.
1.10
1.40
2.42
2.66
0.36
0.76
D
2
1
G
3
S
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulsed Avalanche Energy
1
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
R
θJA
T
J
, T
STG
Rating
600
±30
1
9
0.625
20
200
150, -50~150
Unit
V
V
A
A
W
mJ
° /W
C
°
C
Thermal Resistance Junction-Ambient(Max).
Operating Junction & Storage Temperature
Notes:
1. E
AS
condition: T
j
=25° V
DD
=100V, V
GS
=10V, L=10mH, I
AS
=2A, R
G
=25
.
C,
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Sep-2011 Rev. A
Page 1 of 2
SJV01N60
Elektronische Bauelemente
1A , 600V , R
DS(ON)
10 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
1
1
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
1
Min. Typ.
600
2
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
21
18
24
210
28
4.2
-
Max.
-
4
±100
0.1
10
-
-
-
Unit
V
V
nA
µA
Teat Conditions
V
GS
=0, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=0, V
GS
= ±20V
V
DS
=600V, V
GS
=0
V
GS
=10V, I
D
=0.6A
Gate-Source Leakage Current
Drain-Source Leakage Current
Static Drain-Source On-Resistance
Forward Transconductance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
1
1
R
DS(ON)
g
FS
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
V
SD
S
V
DS
=50V, I
D
=0.5A
V
DD
=300V
I
D
=1A
V
GS
=10V
R
G
=18
nS
-
-
-
-
-
1.5
V
pF
V
GS
=0
V
DS
=25V
f=1.0 MHz
I
S
=1A, V
GS
=0
Notes:
1. Pulse Test : Pulse width≦300µs, duty cycle≦2%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Sep-2011 Rev. A
Page 2 of 2
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