MJE15029: 产品描述POWER TRANSISTOR; 产品类别分立半导体晶体管; 文件大小144KB，共2页; 制造商Central Semiconductor

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MJE15029概述

POWER TRANSISTOR

功率晶体管

MJE15029规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Central Semiconductor
零件包装代码	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
最大集电极电流 (IC)	8 A
集电极-发射极最大电压	120 V
配置	SINGLE
最小直流电流增益 (hFE)	20
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	PNP
最大功率耗散 (Abs)	50 W
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	30 MHz

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MJE15028 MJE15030

MJE15029 MJE15031

NPN

PNP

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJE15028/MJE15029

Series types are Complementary Silicon Power Transistors

designed for use in audio amplifier applications.

COMPLEMENTARY SILICON

POWER TRANSISTORS

MARKING: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TC=25°C)

SYMBOL

TEST CONDITIONS

ICBO

VCB=Rated VCBO

ICEO

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

VCE=Rated VCEO

VEB=5.0V

IC=10mA (MJE15028, MJE15029)

IC=10mA (MJE15030, MJE15031)

IC=1.0A, IB=100mA

VCE=2.0V, IC=1.0A

VCE=2.0V, IC=100mA

VCE=2.0V, IC=2.0A

VCE=2.0V, IC=3.0A

VCE=2.0V, IC=4.0A

VCE=10V, IC=500mA, f=10MHz

MHz

120

150

0.5

1.0

VCEO

VEBO

ICM

TJ, Tstg

MJE15028

MJE15029

120

5.0

8.0

2.0

-65 to +150

62.5

2.5

MJE15030

MJE15031

150

UNITS

°C

°C/W

MIN

MAX

100

UNITS

μA

R0 (17-February 2009)

MJE15029相似产品对比

	MJE15029	MJE15028	MJE15030	MJE15031
描述	POWER TRANSISTOR	POWER TRANSISTOR	POWER TRANSISTOR	8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB
是否Rohs认证	不符合	不符合	不符合	不符合
零件包装代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	TO-220, 3 PIN	TO-220, 3 PIN
针数	3	3	3	3
Reach Compliance Code	unknow	unknow	_compli	_compli
ECCN代码	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	8 A	8 A	8 A	8 A
集电极-发射极最大电压	120 V	120 V	150 V	150 V
配置	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	20	20	20	20
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1
端子数量	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	PNP	NPN	NPN	PNP
最大功率耗散 (Abs)	50 W	50 W	50 W	50 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	30 MHz	30 MHz	30 MHz	30 MHz
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	-

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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