Data Sheet
1.2V Drive Pch MOSFET
RU1C002ZP
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
UMT3F
2.0
0.32
0.9
0.53
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : YK
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RU1C002ZP
Taping
TCL
3000
Inner circuit
(3)
∗2
(1) Gate
(2) Source
(3) Drain
(1)
0.53
0.425
Features
1) Low on-resistance.
2) Low voltage drive(1.2V drive).
0.425
(3)
1.25
2.1
∗1
(2)
1
BODY DIODE
2
ESD PROTECTION DIODE
Absolute maximum ratings
(Ta = 25C)
Symbol
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a reference land.
Limits
20
10
200
800
100
800
150
150
55
to
150
Unit
V
V
mA
mA
mA
mA
mW
C
C
V
DSS
Continuous
Pulsed
Continuous
Pulsed
V
GSS
I
D
I
DP
*1
I
S
I
SP
P
D
Tch
Tstg
*1
*2
Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a reference land.
Symbol
Rth (ch-a)
*
Limits
833
Unit
C
/ W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.09 - Rev.A
RU1C002ZP
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Symbol
I
GSS
I
DSS
V
GS (th)
Min.
-
20
-
0.3
-
Static drain-source on-state
resistance
-
*
R
DS (on)
-
-
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Typ.
-
-
-
-
0.8
1.0
1.3
1.6
2.4
-
115
10
6
6
4
17
17
1.4
0.3
0.3
Max.
10
-
1
1.0
1.2
1.5
2.2
3.5
9.6
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Unit
A
V
A
V
Conditions
V
GS
=10V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=10V, I
D
=100A
I
D
=200mA, V
GS
=4.5V
I
D
=100mA, V
GS
=2.5V
I
D
=100mA, V
GS
=1.8V
I
D
=40mA, V
GS
=1.5V
I
D
=10mA, V
GS
=1.2V
V
DS
=10V, I
D
=200mA
V
DS
=10V
V
GS
=0V
f=1MHz
V
DD
10V,
I
D
=100mA
V
GS
=4.5V
R
L
=100
R
G
=10
V
DD
10V,
I
D
=200mA
V
GS
=4.5V
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
l Y
fs
l *
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
Q
gs
Q
gd
0.2
-
-
-
-
-
-
-
-
-
-
Body
diode characteristics
(Source-Drain)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=200mA, V
GS
=0V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.09 - Rev.A
RU1C002ZP
Electrical
characteristic curves
(Ta = 25°C)
Data Sheet
0.2
V
GS
= -10.0V
V
GS
= -4.5V
V
GS
= -3.2V
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
0.2
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -1.8V
V
GS
= -1.5V
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
1
V
DS
= -10V
Pulsed
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
DRAIN CURRENT : -I
D
[A]
0.15
0.15
0.1
V
GS
= -1.5V
0.05
V
GS
= -1.2V
0
0
0.2
0.4
0.6
V
GS
= -2.5V
V
GS
= -2.0V
V
GS
= -1.8V
0.1
V
GS
= -1.2V
0.01
0.05
V
GS
= -1.0V
0
0.001
V
GS
= -1.0V
0.0001
0
2
4
6
8
10
0
0.5
1
1.5
0.8
1
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical output characteristics(
Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical output characteristics(
Ⅱ)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
Ta=25°C
Pulsed
V
GS
= -4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
10000
10000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
V
GS
= -2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
V
GS
= -1.2V
V
GS
= -1.5V
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
0.01
0.1
1
1000
1000
100
0.001
100
0.001
0.01
0.1
1
100
0.001
0.01
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ)
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ)
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
V
GS
= -1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
GS
= -1.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[mΩ]
10000
10000
10000
V
GS
= -1.2V
Pulsed
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
DRAIN-CURRENT : -I
D
[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅴ)
0.1
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
0.01
0.1
1
100
0.001
0.01
DRAIN-CURRENT : -I
D
[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅵ)
0.1
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/5
2011.09 - Rev.A
RU1C002ZP
Data Sheet
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(ON)[Ω]
REVERSE DRAIN CURRENT : -Is [A]
1.0
V
DS
= -10V
Pulsed
1
V
GS
=0V
Pulsed
5
4
I
D
= -0.2A
3
2
1
0
I
D
= -0.01A
Ta=25°C
Pulsed
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1
DRAIN-CURRENT : -I
D
[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
1
0.01
0
0.5
1
1.5
0
2
4
6
8
10
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
GATE-SOURCE VOLTAGE : -V
GS
[V]
SWITCHING TIME : t [ns]
t
d
(off)
100
t
f
Ta=25°C
V
DD
= -10V
V
GS
=-4.5V
R
G
=10Ω
Pulsed
5
CAPACITANCE : C [pF]
4
3
2
1
0
0
0.5
1
1.5
Ta=25°C
V
DD
= -10V
I
D
= -0.2A
R
G
=10Ω
Pulsed
1000
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
100
10
10
Coss
Crss
1
0.01
0.1
1
10
100
t
r
1
0.01
t
d
(on)
0.1
DRAIN-CURRENT : -I
D
[A]
1
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
Fig.13 Switching Characteristics
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/5
2011.09 - Rev.A
RU1C002ZP
Measurement circuits
Data Sheet
Pulse width
I
D
V
GS
R
L
D.U.T.
R
G
V
DD
V
DS
V
GS
10%
50%
10%
90%
50%
10%
90%
V
DS
90%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
I
D
V
GS
R
L
I
G(Const.)
D.U.T.
V
DD
V
DS
V
GS
Q
gs
Q
g
Q
gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.09 - Rev.A
医疗电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
