HMC484MS8G
/
484MS8GE
Typical Applications
• wireless infrastructure
the hMc484MS8G / hMc484MS8Ge is ideal for:
• iSM/cellular Portables/handsets
• Automotive telematics
• Mobile Radio
• test equipment
Functional Diagram
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v04.0608
GaAs MMIC 10 WATT T/R SWITCH
DC - 3 GHz
Features
high RF Power handling:> +40 dBm
high third Order intercept: > +70 dBm
Single Positive Supply: +3 to +10 Vdc
Low insertion Loss: 0.4 to 0.6 dB
Not
ns
ig
mm
Ultra Small MSOP8G Package:
s
De
14.8
included in the hMc-DK005 Designer’s Kit
New
for
d ed
General Description
men
m
the hMc484MS8G & hMc484MS8Ge
eco
R
2
11
SwitcheS - SPDt t/R - SMt
are low-
cost SPDt switches in 8-lead MSOPG packages for
use in transmit-receive applications which require
very low distortion at high input signal power levels,
through 10 watts (+40 dBm). the device can control
signals from Dc to 3.0 Ghz. the design provides
exceptional intermodulation performance; > +70 dBm
third order intercept at +5 volt bias. RF1 and RF2
are reflective shorts when “OFF”. On-chip circuitry
allows single positive supply operation from +3 Vdc
to +10 Vdc at very low Dc current with control inputs
compatible with cMOS and most ttL logic families.
Electrical Specifications,
T
A
= +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc
(Unless Otherwise Stated)
, 50 Ohm System
Parameter
Frequency
Dc - 1.0 Ghz
Dc - 2.0 Ghz
Dc - 2.5 Ghz
Dc - 3.0 Ghz
Dc - 3.0 Ghz
Dc - 1.0 Ghz
Dc - 2.0 Ghz
Dc - 2.5 Ghz
Dc - 3.0 Ghz
Vctl = 0/+3V
Vctl = 0/+5V
Vctl = 0/+8V
Vctl = 0/+3V
Vctl = 0/+5V
Vctl = 0/+8V
0.5 - 3.0 Ghz
32
37
40
26
Min.
typ.
0.4
0.6
0.8
0.9
30
24
20
17
13
32
36
39
35.5
40
>40
72
70
Max.
0.6
0.8
1.1
1.3
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
insertion Loss
isolation
Return Loss (On State)
input Power for 0.1dB compression
input Power for 1dB compression
input third Order intercept
(two-tone input power = +30 dBm each tone)
Switching characteristics
0.5 - 3.0 Ghz
0.5 - 1.0 Ghz
0.5 - 3.0 Ghz
tRiSe, tFALL (10/90% RF)
tON, tOFF (50% ctL to 10/90%
RF)
Dc - 3.0 Ghz
15
40
ns
ns
11 - 1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Insertion Loss vs. Temperature
0
-0.5
INSERTION LOSS (dB)
-1
-1.5
-2
-2.5
-3
0
0.5
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v04.0608
HMC484MS8G / 484MS8GE
GaAs MMIC 10 WATT T/R SWITCH
DC - 3 GHz
Isolation
0
-10
ISOLATION (dB)
-20
+25 C
+85 C
-40 C
-30
-40
1
1.5
2
2.5
FREQUENCY (GHz)
Not
end
m
om
Rec
3
3.5
-50
New
for
ed
0
0.5
1
s
ign
Des
RF1
RF2
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
Insertion Loss vs. Bias Voltage (Vdd)
0
-0.5
INSERTION LOSS (dB)
Isolation vs. Bias Voltage (Vdd)
0
11
SwitcheS - SPDt t/R - SMt
11 - 2
-10
ISOLATION (dB)
+3 Volts
+5 Volts
+8 Volts
+10 Volts
-1
+3 Volts
+5 Volts
+8 Volts
+10 Volts
-20
-1.5
-2
-30
-2.5
-3
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
-40
-50
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
Return Loss
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
RFC
RF1, RF2
RF1 to RF2 Isolation
0
-10
ISOLATION (dB)
-20
-30
ALL OFF
RF1 ON
RF2 ON
-40
-50
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC484MS8G / 484MS8GE
Input P0.1dB vs. Vdd
50
45
P0.1dB (dBm)
40
35
30
25
0
0.5
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v04.0608
GaAs MMIC 10 WATT T/R SWITCH
DC - 3 GHz
Input P1dB @ Vdd = +5 Volts
45
+3 Volts
+5 Volts
+8 Volts
40
P1dB (dBm)
35
30
1
1.5
2
2.5
FREQUENCY (GHz)
11
SwitcheS - SPDt t/R - SMt
INSERTION LOSS (dB)
2nd & 3rd Harmonics @ 900 MHz,
Vdd = +3 Volts
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-2.2
-2.4
10
15
20
25
INPUT POWER (dBm)
30
INSERTION LOSS
F2
F3
Not
end
m
om
Rec
3
3.5
25
New
for
ed
0
0.5
1
s
ign
Des
+25 C
+85 C
-40 C
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
2nd & 3rd Harmonics @ 900 MHz,
Vdd = +5 Volts
0
-10
-20
-40
-50
-60
-70
-80
-90
-100
-110
-120
35
INSERTION LOSS (dB)
-30
HARMONICS (dBc)
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-2.2
-2.4
10
15
20
25
30
INPUT POWER (dBm)
35
INSERTION LOSS
F2
F3
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
40
HARMONICS (dBc)
2nd & 3rd Harmonics @ 900 MHz,
Vdd = +8 Volts
0
-0.2
-0.4
INSERTION LOSS (dB)
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-2.2
-2.4
10
15
20
25
30
INPUT POWER (dBm)
35
INSERTION LOSS
F2
F3
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
40
HARMONICS (dBc)
Contact HMC Applications Group for input third order & input compression data from DC - 0.5 GHz.
11 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC484MS8G / 484MS8GE
Input IP3 @ Vdd = +3 Volts
50
45
40
35
30
25
0
0.5
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v04.0608
GaAs MMIC 10 WATT T/R SWITCH
DC - 3 GHz
Input IP3 @ Vdd = +5 Volts
80
75
70
65
60
55
50
+25 C
+85 C
-40 C
1
1.5
2
2.5
FREQUENCY (GHz)
Not
end
m
om
Rec
3
3.5
New
for
ed
0
0.5
1
s
ign
Des
+25 C
+85 C
-40 C
IP3 (dBm)
IP3 (dBm)
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
Input IP3 @ Vdd = +8 Volts
80
75
70
IP3 (dBm)
65
60
55
50
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
Input IP3 @ Vdd = +10 Volts
80
75
70
IP3 (dBm)
65
60
55
50
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
+25 C
+85 C
-40 C
11
SwitcheS - SPDt t/R - SMt
11 - 4
+25 C
+85 C
-40 C
Input IP3 vs. Input Power @ 900 MHz
80
Input IP3 vs. Input Power @ 1900 MHz
80
70
70
IP3 (dBm)
50
+3 Volts
+5 Volts
+8 Volts
+10 Volts
IP3 (dBm)
60
60
50
+3 Volts
+5 Volts
+8 Volts
+10 Volts
40
40
30
27
28
29
30
31
32
TWO TONE INPUT POWER (dBm) (EACH TONE)
33
30
27
28
29
30
31
32
TWO TONE INPUT POWER (dBm) (EACH TONE)
33
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC484MS8G / 484MS8GE
Bias Voltage & Current
Vdd (Vdc)
+3
+5
+8
+10
Control Voltages
State
Low
high
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v04.0608
GaAs MMIC 10 WATT T/R SWITCH
DC - 3 GHz
Absolute Maximum Ratings
RF input Power (Vctl = 0V/+8V)
(0.5 - 3 Ghz)
Supply Voltage Range (Vdd)
(Vctl = 0V)
typical idd (µA)
0.5
10
+40 dBm (t = +85 °c)
+13 Vdc
50
75
control Voltage Range (A & B)
hot Switch Power Level
(Vdd = +8V)
channel temperature
Bias condition
0 to +0.2 Vdc @ 10 µA typical
Vdd ± 0.2 Vdc @ 10 µA typical
11
SwitcheS - SPDt t/R - SMt
Truth Table
control input (Vctl)
A
high
Low
Low
B
Low
high
Low
Not
end
m
om
Rec
RFc to RF2
On
Off
Off
continuous Pdiss (t = 85 °c)
(derate 25 mw/°c above 85 °c)
thermal Resistance
New
for
ed
s
ign
Des
39 dBm
150 °c
1.6 w
40 °c/w
-65 to +150 °c
-40 to +85 °c
class 1A
Vdd - 13 Vdc to Vdd + 0.7 Vdc
Storage temperature
Operating temperature
eSD Sensitivity (hBM)
Signal Path State
RFc to RF1
Off
On
Off
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
eLectROStAtic SeNSitiVe DeVice
OBSeRVe hANDLiNG PRecAUtiONS
Typical 0.5 to 3.0 GHz
Compression vs. Bias Voltage (Vdd)
Bias Vdd
(Volts)
+3
+5
+8
+10
input Power for 0.1 dB
compression
(dBm)
32
36
39
>40
input Power for 1.0 dB
compression
(dBm)
35.5
40
>40
>40
11 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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