WTPA16A60CW
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(I
T(RMS)
=16A
■ Low on-state voltage: V
TM
=1.55V(Max.)@ I
T
=22.5A
■ High Commutation dV/dt.
General Description
General purpose swithhing and phase control applications. These
devices are intended to be interfaced directly to micro-controllers,
logic integrated circuits and other low power gate trigger circuits
such as fan speed and temperature modulation control, lighting
control and static switching relay.
The -W series are specially recommended for use on inductive loads,
thanks to their high commutation performances. By using an internal
ceramic pad, the WTPA series provides voltage insulated tab (rated
at 2500V RMS). complying with UL standards (file ref.:E347423)
Tab
TO220ISO
Absolute Maximum Ratings
Symbol
V
DRM
/V
PRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
dI/dt
I
FGM
V
RGM
T
J,
T
stg
(TJ=25℃ unless otherwise specified)
Parameter
Peak Repetitive Forward Blocking Voltage(gate open)
Forward Current RMS (All Conduction Angles, TJ=58℃)
Peak Forward Surge Current,
(full Cycle, Sine Wave, 50/60 Hz)
(Note 1)
Value
600
16
160/168
144
5
1
50
4
10
-40~125
-40~150
Units
V
A
A
A
2
s
W
W
A/μs
A
V
℃
℃
Circuit Fusing Considerations (tp= 10 ms)
Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
T
J
=125℃
I
TM
= 20A; I
G
= 200mA; dI
G
/dt = 200mA/µs
Peak Gate Current — Forward, T
J
= 125°C (20 µs, 120 PPS)
Peak Gate Voltage — Reverse, T
J
= 125°C (20 µs, 120 PPS)
Junction Temperature
Storage Temperature
Note1:
.Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
1.6
60
Units
℃/W
℃/W
Rev. A Sep.2010
Copyright @ WinSemi Microelectronics Co., Ltd., All rights reserved.
T03-3
WTPA16A60CW
Electrical Characteristics
(T
J
= 25°C
unless otherwise
specified)
Symbol
Characteristics
Peak Forward or Reverse Blocking Current
I
DRM/
/I
RRM
(V
DRM
=V
RRM,
)
Forward “On” Voltage
(Note2)
T
J
=25℃
T
J
=125℃
(I
TM
= 22.5A tp=380μs)
T2+G+
T2+G-
T2-G-
T2+G+
V
GT
Gate Trigger Voltage (Continuous dc)
(V
D
=12 Vdc, R
L
= 33 Ω)
T2+G-
T2-G-
V
GD
dV/dt
I
H
Gate threshold voltage( V
D
= V
DRM,
RL = 3.3 KΩ,T
J
=125℃,)
Critical rate of rise of commutation Voltage (V
D
=0.67V
DRM
)
Holding Current (I
T
= 100 mA)
Latching current
Typ
Min
.
-
-
-
-
-
-
-
-
-
0.2
40
-
T2+G+
T2+G-
T2-G-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
1
1.55
35
35
35
1.2
1.2
1.2
-
-
15
25
30
25
25
mΩ
mA
V
V/μs
mA
V
mA
μA
mA
V
Max
Unit
V
TM
Gate Trigger Current (Continuous dc)
I
GT
(V
D
= 12 Vdc, R
L
= 33 Ω)
I
L
(V
D
=12 Vdc,I
GT
=0.1A)
Dynamic resistance
R
d
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Steady, keep you advance
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