Preliminary
Datasheet
RJP63F3DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
•
•
•
•
•
Trench gate and thin wafer technology (G6H series)
Low collector to emitter saturation voltage V
CE(sat)
= 1.7 V typ
High speed switching tf = 100 ns typ
Low leak current I
CES
= 1
μA
max
Isolated package TO-220FL
R07DS0321EJ0200
Rev.2.00
May 26, 2011
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Tc = 25°C
Symbol
V
CES
V
GES
I
C
ic(peak)
Note1
P
C Note2
θj-c
Tj
Tstg
Ratings
630
±30
40
200
30
4.17
150
–55 to +150
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 1 of 6
RJP63F3DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
Min
—
—
2.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.7
1250
48
22
36
7
10
0.02
0.07
0.05
0.1
Max
1
±100
5
2.2
—
—
—
—
—
—
—
—
—
—
Unit
μA
nA
V
V
pF
pF
pF
nC
nC
nC
μs
μs
μs
μs
Test Conditions
V
CE
= 630 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 40 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 40 A
I
C
= 40 A
R
L
= 7.5
Ω
V
GE
= 15 V
Rg = 5
Ω
Notes: 3. Pulse test.
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 2 of 6
RJP63F3DPP-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
100
10
PW
Typical Output Characteristics (1)
Pulse Test
Ta = 25
°
C
7.5 V
8V
60
10 V
15 V
40
5.5 V
6V
7V
6.5 V
Collector Current I
C
(A)
100
=
μ
s
Collector Current I
C
(A)
80
10
0
10
μ
s
1
0.1
Ta = 25
°
C
1 shot pulse
1
10
100
1000
20
0
0
1
2
3
V
GE
= 5 V
0.01
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics (2)
200
Pulse Test
Ta = 25
°
C
10 V
12 V
120
15 V
9V
8.5 V
100
Typical Transfer Characteristics
V
CE
= 10 V
Pulse Test
80
Collector Current I
C
(A)
160
7.5 V
7V
6.5 V
Collector Current I
C
(A)
8V
60
80
6V
5.5 V
40
Tc = 125°C
20
0
75°C
25°C
40
0
0
2
4
6
V
GE
= 5 V
8
10
0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
8
Pulse Test
Ta = 25
°
C
6
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
10
V
GE
= 15 V
Pulse Test
Tc = 125°C
4
I
C
= 120 A
1
25°C
75°C
2
80 A
40 A
0
0
4
8
12
16
20
0.1
1
10
100
Gate to Emitter Voltage V
GE
(V)
Collector Current I
C
(A)
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 3 of 6
RJP63F3DPP-M0
Typical Capacitance vs.
Collector to Emitter Voltage (Typical)
10000
Cies
1000
Preliminary
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
V
GE
V
CE
= 500 V
300 V
600
V
CE
400
12
100
Coes
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
20
40
60
80
Cres
8
200
V
CE
= 500 V
300 V
I
C
= 40 A
0
8
16
24
32
4
1
100
0
0
40
Collector to Emitter Voltage V
CE
(V)
Gate Charge Qg (nc)
Switching Characteristics (Typical) (1)
1000
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
1000
Switching Characteristics (Typical) (2)
I
C
= 40 A, R
L
= 7.5
Ω
V
GE
= 15 V, Ta = 25
°
C
td(off)
tf
tr
Switching Time t (ns)
tf
100
td(off)
tr
td(on)
Switching Time t (ns)
100
td(on)
10
1
10
100
10
1
10
100
Collector Current I
C
(A)
Gate Resistance Rg (Ω)
Switching Characteristics (Typical) (3)
1000
I
C
= 40 A, R
L
= 7.5
Ω
V
GE
= 15 V, Rg = 5
Ω
Switching Time t (ns)
tf
100
tr
td(off)
td(on)
10
0
25
50
75
100
125
150
Case Temperature Tc (°C)
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 4 of 6
Gate to Emitter Voltage V
GE
(V)
800
16
Capacitance C (pF)
RJP63F3DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
1m
10 m
100 m
1
10
D=1
0.5
0.2
0.1
Preliminary
Tc = 25°C
0.05
0.02
0.01
ho
1s
u
tp
lse
P
DM
PW
T
D=
PW
T
Pulse Width PW (s)
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
Vin
10%
90%
Waveform
90%
90%
Rg
Vin = 15 V
D.U.T.
V
CC
Ic
td(on)
ton
10%
tr
10%
td(off)
toff
tf
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Page 5 of 6
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