Preliminary
Datasheet
RJK4002DPP-M0
400V - 3A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 2.4
typ. (at I
D
= 1.5 A, V
GS
= 10 V, Ta = 25C)
High speed switching
R07DS0551EJ0200
Rev.2.00
Aug 03, 2012
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10 ms, duty cycle
1 %
Value at Tc = 25C
STch = 25C, Tch
150C
Pulse width limited by safe operating area.
Symbol
V
DSS
V
GSS
Note4
I
D
I
D(pulse)
I
DR
Note1
I
DR(pulse)
Note3
I
AP
Note3
E
AR
Pch
Note 2
ch-c
Tch
Tstg
Note1
Value
400
30
3
6
3
6
2.5
0.357
20
6.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
Page 1 of 6
RJK4002DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
400
—
—
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.4
165
25
2.6
11
12
23
20
6.0
1.2
3.4
0.9
200
Max
—
1
0.1
4.5
2.9
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.5 A, V
GS
= 10 V
Note 5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 1.5 A
V
GS
= 10 V
R
L
= 133
Rg = 10
V
DD
= 320 V
V
DS
= 100 V
I
D
= 3 A
I
F
= 3 A, V
GS
= 0
Note 5
I
F
= 3 A, V
GS
= 0
V
DD
= 320 V
di
F
/dt = 100 A/s
Note:
5. Pulse test
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
Page 2 of 6
RJK4002DPP-M0
Preliminary
Main Characteristics
Maximum
Safe Operation Area
100
5
Ta =
25°C
Pulse
Test
6.2 V
7V
10
V
6V
3
5.8 V
5.6 V
5.4 V
1
0
0
4
8
12
16
20
5.2 V
V
GS
= 5 V
6.4 V
Typical
Output
Characteristics
I
D
(A)
Drain
Current
I
D
(A)
10
P
W
4
10
μ
s
1
=
10
Drain
Current
0
μ
s
0.1
0.01
Operation
in
this
area
is limited by
R
DS(on)
Tc =
25°C
1
shot
1
10
100
1000
2
0.001
0.1
Drain to Source
Voltage
V
DS
(V)
Drain to Source
Voltage
V
DS
(V)
Typical Transfer Characteristics
V
DS
=
10
V
Pulse
Test
1
Static Drain to Source on State Resistance
vs.
Drain
Current
(Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
10
Drain
Current
I
D
(A)
0.1
Tc = 75°C
25°C
−25°C
1
0.01
V
GS
=
10
V
Ta =
25°C
Pulse
Test
0.1
0.1
1
10
0.001
0
2
4
6
8
Gate to Source
Voltage
V
GS
(V)
Drain
Current
I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature
(Typical)
10
V
GS
=
10
V
Ta =
25°C
Pulse
Test
1000
Body-Drain
Diode Reverse
Recovery
Time
(Typical)
Reverse Recovery
Time
trr (ns)
8
6
I
D
=
3 A
100
4
1.5 A
2
0
−25
di
/
dt
=
100 A
/
μs
V
GS
=
0,
Ta =
25°C
10
0.1
1
10
0
25
50
75
100 125 150
Case Temperature
Tc
(°C)
Reverse Drain
Current
I
DR
(A)
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
Page 3 of 6
RJK4002DPP-M0
Typical Capacitance vs.
Drain to Source
Voltage
V
DS
(V)
1000
V
GS
=
0
f =
1
MHz
Tc =
25°C
Ciss
100
Preliminary
Dynamic
Input Characteristics
(Typical)
I
D
=
3 A
Ta =
25°C
Capacitance C
(pF)
600
12
V
DD
=
100
V
200
V 8
320
V
Drain to Source
Voltage
400
V
DS
10
Coss
200
Crss
1
0
V
DD
=
320
V
200
V
100
V
2
4
6
8
4
0
0
10
40
80
120
160
200
Drain to Source
Voltage
V
DS
(V)
Gate
Charge
Qg
(nC)
Reverse Drain
Current vs.
Source to Drain
Voltage
(Typical)
5
5.0
Gate to Source
Cutoff Voltage
vs. Case Temperature
(Typical)
I
DR
(A)
Gate to Source
Cutoff Voltage
V
GS(off)
(V)
4
V
GS
=
0
Ta =
25°C
Pulse
Test
4.5
4.0
3.5
1 mA
3.0
2.5
V
DS
=
10
V
2.0
-25
0
25
I
D
=
10 mA
Reverse Drain
Current
3
2
1
0
0
0.4
0.8
1.2
1.6
2.0
0.1 mA
50
75
100 125 150
Source to Drain
Voltage
V
SD
(V)
Case Temperature
Tc
(°C)
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
Page 4 of 6
Gate to Source
Voltage
V
GS
(V)
800
V
GS
16
RJK4002DPP-M0
Normalized Transient Thermal Impedance vs.
Pulse
Width
Normalized Transient Thermal Impedance
γ
s
(t)
10
Tc =
25°C
1
D
=
1
0.5
0.2
Preliminary
0.1
0
.1
0
.05
0
.
02
0.01
0
.
01
h
o
1
s
u
ls
t
p
e
θ
ch
–
c(t)
=
γ
s
(t)
•
θ
ch
–
c
θ
ch
–
c
= 6.25°C/W, Tc =
25°C
P
DM
PW
T
100
μ
1m
10 m
100 m
1
10
100
D
=
PW
T
0.001
10
μ
Pulse
Width
PW (s)
Switching
Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10
V
V
DD
=
200
V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
t
f
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
Page 5 of 6
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