WILLAS
DATA SHEET
GDZ2.0~GDZ56
AXIAL LEAD ZENER DIODES
VOLTAGE
SCS501V
VOLTAGE 40V
0.1AMP Schottky Barrier
Pb Free Product
FEATURES
mWatts
DO-35
SOD-323(SC-76)
.012
Unit: inch (mm)
(0.3)
2.0 to 56 Volts
* Extremely Low VF
500
POWER
* Low stored charge
FEATURES
• Planar Die construction
• 500mW Power Dissipation
* Extremely thin package
.112 (2.85)
.100 (2.55)
.076 (1.95)
Cathode Ban
.065 (1.65)
.022(0.55)
.018(0.45)
* Majority carrier conduction
1.02(26.0)
MIN.
Top V
• Ideally Suited for Automated Assembly Processes
Dimen
and
MECHANICAL DATA
• Case: Molded Glass DO-35
.059 (1.5)
.153(3.6)
.132(3.0)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
• Terminals: Solderable per MIL-STD-202, Method 208
* Terminal : Solder plated, solderable per MIL-STD-750,
• Polarity: See Diagram Below
• Approx. Weight: 0.13 grams
• Mounting Position: Any
• Packing information
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
1 . 02 (2 6 .0 )
MIN.
.087(2.2)
.067(1.7)
Weight :
box
T/B - 5K per horiz. tape
*
& Ammo
0.000159 ounce, 0.0045 gram
Marking Code: JV or 4
MAXIMUM RATING AND ELECTRICAL CHARACTERIS
MAXIMUM RATINGS AND ELECTRICAL
load, derate current by 20%
CHARACTERISTICS
For capacitive
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
O
Rating 25
o
C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Repetitive Peak Reverse Voltage
Symbol
Conditions
Value
500
175
-65 to +175
.004 (0.1)
max.
MECHANICAL DATA
.043 (1.1)
Units
mW
O
Symbol
V
RM
V
R
V
F1
V
F2
.049 (1.25)
max.
Min.
Typ
C
Continuous Reverse Voltage
P
TOT
I
F
= 10mA DC
T
J
I
F
= 100mA DC
Forward Voltage
Reverse Current
Mean Rectifying Current
C
C
T
S
V
R
= 10V DC
O
I
R
I
O
I
FSM
C
T
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
0.1
Peak forward surge current
Operating Temperature
Symbol
1
Capacitance between terminals
Parameter
Mi n.
--
--
Typ.
Max.
0.3
1
Uni ts
K/mW
V
6.0
T
J
T
STG
-40
12
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 100mA
Storage Temperature
RthA
--
--
VF
Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
2009.10
WILLAS ELECTRONIC CORP.
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