TSA1036D
General Purpose Dual PNP Transistor
Pin assignment:
6. Collector 1
1. Emitter 1
5. Base 2
2. Base 1
4. Emitter 2
3. Collector 2
BV
CEO
= - 32V
Ic = - 500mA
V
CE (SAT)
, = 0.4V(typ.) @Ic / Ib = 300mA / 30mA
Features
Two TSA1036 chips in a STO-363 package
Transistor elements are independent, eliminating
interference
Optimal for low voltage operation
Ordering Information
Part No.
TSA1036DCU6
Packing
3kpcs / reel
Package
SOT-363
Marking
1PR
Structure
Epitaxial planar type.
Mounting possible with SOT-323 automatic mounting
machines.
Complementary to TSC2411DCU6
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (note)
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. 150mW per element must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
- 40V
- 32V
-5
- 0.5
200 (total)
+150
- 55 to +150
Unit
V
V
V
A
mW
o
o
C
C
Electrical Characteristics
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= - 100uA, I
E
= 0
I
C
= - 1mA, I
B
= 0
I
E
= - 100uA, I
C
= 0
V
CB
= - 20V, I
E
= 0
V
EB
= - 4V, I
C
= 0
I
C
/ I
B
= - 100mA / - 10mA
I
C
/ I
B
= - 300mA / - 30mA
V
CE
= - 3V, I
C
= 100mA
V
CE
= - 10V, I
C
= - 1mA,
f=100MHz
V
CB
= - 10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
h
FE
f
T
Cob
Min
- 40
- 32
-6
--
--
--
--
120
--
--
Typ
--
--
--
--
--
--
- 0.40
--
180
2
Max
--
--
--
- 0.5
- 0.5
- 0.4
- 0.75
390
--
--
Unit
V
V
V
uA
uA
V
V
MHz
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
TSA1036D
1-1
2004/06 rev. A
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