UNISONIC TECHNOLOGIES CO., LTD
UF634
ADVANCED POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UF634
is a N-channel Power MOSFET and it uses UTC
advanced technology to provide customers with lower R
DS(ON),
improved gate charge and so on.
FEATURES
* R
DS(ON)
<0.45Ω @ V
GS
=10V, I
D
=8.1A
* Lower Input Capacitance
* Improved Gate Charge
* Lower Leakage Current: 10μA (MAX.) @ V
DS
= 250V
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Extended Safe Operating Area
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F
TO-252
SOP-8
1
G
G
G
G
S
2
D
D
D
D
S
Pin Assignment
3 4 5 6
S - - -
S - - -
S - - -
S - - -
S G D D
7
-
-
-
-
D
Packing
8
Tube
-
Tube
-
Tube
-
- Tape Reel
D Tape Reel
Ordering Number
Lead Free
Halogen Free
UF634L-TA3-T
UF634G-TA3-T
UF634L-TF1-T
UF634G-TF1-T
UF634L-TF3-T
UF634G-TF3-T
UF634L-TN3-R
UF634G-TN3-R
-
UF634G-S08-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-454.F
UF634
MARKING
TO-220 / TO-220F / TO-220F1
TO-220F2 / TO-252 / TO-262
SOP-8
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-454.F
UF634
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-to-Source Voltage
V
GS
± 30
V
Drain-to-Source Voltage
V
DSS
250
V
Continuous Drain Current
T
C
=25°C
I
D
8.1
A
Drain Current-Pulsed (Note 2)
I
DM
32.4
A
Avalanche Current (Note 2)
I
AR
8.1
A
Single Pulsed Avalanche Energy (Note 3)
E
AS
205
mJ
Repetitive Avalanche Energy (Note 2)
E
AR
7.4
mJ
TO-220
74
W
TO-220F/TO-220F1
38
W
Power Dissipation
P
D
TO-252
50
W
SOP-8
5
W
Operating Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
3. L=6.24mH, I
AS
=8.1A, V
DD
=50V, R
G
=27
Ω,
Starting T
J
=25°C
THERMAL RESISTANCE
SYMBOL
θ
JA
RATINGS
62.5
110
83
1.69
3.29
2.5
24
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
PARAMETER
TO-220/TO-220F1
TO-220F
Junction to Ambient
TO-252
SOP-8
TO-220
TO-220F/TO-220F1
Junction to Case
TO-252
SOP-8
θ
JC
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-454.F
UF634
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=250V
Gate- Source Leakage Current
I
GSS
V
GS
=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=8.1A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=200V, I
D
=8.1A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=125V, I
D
=8.1A, R
G
=12Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=8.1A, V
GS
=0V, T
J
=25°C
(Note 2)
Maximum Body-Diode Continuous Current
I
S
Pulsed-Source Current (Note 1)
I
SM
Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. Pulse Test: Pulse Width = 250µs, Duty Cycle
≤2%.
3. Essentially Independent of Operating Temperature.
Power MOSFET
MIN TYP MAX UNIT
250
V
10
µA
±100 nA
4.0
0.45
730 950
110 130
50
60
30
40
5.8
13.5
13
40
14
40
53 120
21
50
1.5
8.1
32.4
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
2.0
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QW-R502-454.F
UF634
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-454.F
嵌入式系统
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