Naina Semiconductor Ltd.
emiconductor
Features
•
•
•
•
•
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Metric thread type available
Low thermal resistance
56NT
Phase Control Thyristors, 56 (Stud and Lead Type)
56A
Electrical Ratings
(T
J
= 25
0
C, unless otherwise noted)
Parameters
Maximum on-state average current 180
0
sinusoidal conduction @ T
J
= 85 C
Maximum RMS on-state current
O
Symbol
I
T(AV)
I
T(RMS)
I
TSM
It
V
RRM
,
V
DRM
V
TM
I
H
I
L
di/dt
2
Values
55
Units
A
A
Maximum peak, one cycle non-repetitive
surge current
2
Maximum I t for fusing
Maximum repetitive peak on and off-state
voltage range
0
Maximum peak on-state voltage (T
J
= 25 C,
I
peak
= 79A)
Maximum holding current @ T
J
Maximum latching current @T
J
Maximum rate of rise of turn-on current,
V
DRM
≤ 600V
T
J
= T
J
maximum,
Critical rate of rise of 100% V
DRM
off-state voltage
T
J
= T
J
maximum,
67% V
DRM
Maximum gate
anode supply 6 V
current required to
resistive load @T
J
trigger
Maximum gate
voltage required to
trigger
900
800
200 to
1600
1.2
150
400
200
100
A
As
V
V
mA
mA
A/µs
2
dv/dt
300
I
GT
100
V/µs
mA
TO-208AC (TO-65) & TO
) TO-209AC (TO-94)
V
GT
2.0
V
Thermal and Mechanical Specifications
(T
J
= 25
0
C, unless otherwise noted)
Parameters
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Mounting torque
Approximate weight
Symbol
T
J
T
Stg
R
th(JC)
Values
- 60 to +125
- 60 to +125
0.6
0.
0.2(min) to 0.3(max)
14
0
Units
0
C
0
C
C/W
mkg
g
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120
4205450
0120-4273653
sales@nainasemi.com • www.nainasemi.com
嵌入式系统
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