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TN0110ND: 产品描述Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; 产品类别分立半导体晶体管; 文件大小67KB，共2页; 制造商Topaz Semiconductor

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TN0110ND概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

	TN0110ND	SD1137BD	SD1137CHP	TN0106N3	TN0110N3	TN0106ND
描述	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Transistor,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
配置	Single	Single	-	Single	Single	Single
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	-	150 °C	150 °C	150 °C
极性/信道类型	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
表面贴装	YES	NO	-	NO	NO	YES

器件捷径: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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