Freescale Semiconductor
Technical Data
Document Number: MMZ25332B
Rev. 0, 5/2012
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier
designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA
and LTE wireless broadband applications. It provides exceptional linearity for
LTE and W--CDMA air interfaces with an ACPR of --50 dBc at an output power
of up to 22 dBm, covering frequencies from 1800–2800 MHz. It operates from a
supply voltage of 3 to 5 volts. The amplifier is fully input matched, requires
minimal external matching on the output and is housed in a cost--effective,
surface mount QFN 3×3 package. The device offers state--of--the--art reliability,
ruggedness, temperature stability and ESD performance.
•
Typical Performance: V
CC1
= V
CC2
= V
BIAS
= 5 Volts, I
CQ
= 400 mA
Frequency
2140 MHz
2620 MHz
P
out
(dBm)
22
21
G
ps
(dB)
27.0
26.0
ACPR
(dBc)
--50.0
--50.0
PAE
(%)
7.0
5.0
Test Signal
W--CDMA
LTE
20 MHz
MMZ25332BT1
1800-
-2800 MHz, 26.5 dB
33 dBm
InGaP HBT
QFN 3
×
3
PLASTIC
Features
•
Frequency: 1800--2800 MHz
•
P1dB: 33 dBm @ 2500 MHz
•
Power Gain: 26.5 dB @ 2500 MHz
•
OIP3: 48 dBm @ 2500 MHz
•
EVM < 3% @ 26.5 dBm P
out
, WiMAX (802.16e)
•
Active Bias Control (adjustable externally)
•
Single 3 to 5 Volt Supply
•
Single--ended Power Detector
•
Cost--effective QFN Surface Mount Package
•
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
Table 1. Typical CW Performance
(1)
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @
1dB Compression
Symbol
G
p
IRL
ORL
P1dB
1800
MHz
27.6
--26
--9
32
2500
MHz
26.5
--17
--17
33
2800
MHz
25.0
--16
--16
32
Unit
dB
dB
dB
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
6
1200
30
--65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
CC1
= V
CC2
= V
BIAS
= 5 Vdc, T
A
= 25°C, 50 ohm system,
CW Application Circuit
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 92°C, V
CC1
= V
CC2
= V
BIAS
= 5 Vdc
Symbol
R
θJC
Value
(3)
16
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
MMZ25332BT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(V
CC1
= V
CC2
= V
BIAS
= 5 Vdc, 2500 MHz, T
A
= 25°C, 50 ohm system, in Freescale CW
Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Output Intercept Point, Two--Tone CW
Noise Figure
Supply Current
(1)
Supply Voltage
(1)
Symbol
G
p
IRL
ORL
P1dB
OIP3
NF
I
CQ
V
CC
Min
25
—
—
—
—
—
356
—
Typ
26.5
--17
--17
33
48
5.8
390
5
Max
—
—
—
—
—
—
412
—
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
Table 5. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
3A
B
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
1. For reliable operation, the junction temperature should not exceed 150°C.
Rating
1
Package Peak Temperature
260
Unit
°C
V
CC1
V
CC1
P
DET
V
CC1
V
CC1
P
DET
V
CC2
/RF
out
12
N.C.
RF
in
RF
in
1
2
3
4
5
6
11
10
9
8
7
V
CC2
/RF
out
V
CC2
/RF
out
V
CC2
/RF
out
RF
in
RF
in
V
CC2
/RF
out
V
CC2
/RF
out
BIAS
CIRCUIT
V
BA1
V
BA2
V
BIAS
V
BA1
V
BA2
V
BIAS
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MMZ25332BT1
2
RF Device Data
Freescale Semiconductor, Inc.
V
CC1
L1
C4
P
DET
C1
C3
L2
12
11
10
V
CC2
C6
1
9
RF
OUTPUT
C14
2
RF
INPUT
8
Z1
C13
C9
3
BIAS CIRCUIT
7
C15
4
R1
5
R2
6
C7
V
BIAS
C12
Z1
0.155″
×
0.030″ Microstrip
Figure 3. MMZ25332BT1 Test Circuit Schematic — 2500 MHz, 5 Volt Operation
Table 7. MMZ25332BT1 Test Circuit Component Designations and Values — 2500 MHz, 5 Volt Operation
Part
C1, C12
C2, C5, C8, C10, C11
C3
C4
C6
C7
C9, C14
C13
C15
L1
L2
R1
R2
PCB
Description
1
μF
Chip Capacitors
Components Not Placed
470 pF Chip Capacitor
7.5 pF Chip Capacitor
4.7
μF
Chip Capacitor
120 pF Chip Capacitor
22 pF Chip Capacitor
2.4 pF Chip Capacitor
1.8 pF Chip Capacitor
24 nH Chip Inductor
22 nH Chip Inductor
1.2 kΩ, 1/16 W Chip Resistor
330
Ω,
1/16 W Chip Resistor
0.014″,
ε
r
= 3.7
GRM1555C1H471JA01D
04023J7R5BBS
GRM188R60J475KE19D
GRM1555C1H121JA01D
04023J22R0BBS
04023J2R4BBS
04023J1R8BBS
0603HC--24NXJLW
0603HC--22NXJLW
RC0402JR--071K20L
RC0402JR--07330RL
FR408
Murata
AVX
Murata
Murata
AVX
AVX
AVX
Coilcraft
Coilcraft
Yageo
Yageo
Isola
Part Number
GRM155R61A105KE15
Manufacturer
Murata
Note: Component numbers C2, C5, C8, C10 and C11 are labeled on board but not placed.
MMZ25332BT1
RF Device Data
Freescale Semiconductor, Inc.
3
V
DECT
V
CC1
C1
C2*
RF
IN
L1
C4
C9
C10*
C7
R1
V
CC2
C5*
C3
C6
L2
RF
OUT
C13
C11*
C8*
R2
C12
C15
C14
QFN 3×3--12H
Rev. 1
(1) V
BIAS
[Board] supplies V
BA1
, V
BA2
and V
BIAS
[Device].
Note: Component numbers C2*, C5*, C8*, C10* and C11* are labeled on board but not placed.
Figure 4. MMZ25332BT1 Test Circuit Component Layout — 2500 MHz, 5 Volt Operation
Table 7. MMZ25332BT1 Test Circuit Component Designations and Values — 2500 MHz, 5 Volt Operation
Part
C1, C12
C2, C5, C8, C10, C11
C3
C4
C6
C7
C9, C14
C13
C15
L1
L2
R1
R2
PCB
Description
1
μF
Chip Capacitors
Components Not Placed
470 pF Chip Capacitor
7.5 pF Chip Capacitor
4.7
μF
Chip Capacitor
120 pF Chip Capacitor
22 pF Chip Capacitor
2.4 pF Chip Capacitor
1.8 pF Chip Capacitor
24 nH Chip Inductor
22 nH Chip Inductor
1.2 kΩ, 1/16 W Chip Resistor
330
Ω,
1/16 W Chip Resistor
0.014″,
ε
r
= 3.7
GRM1555C1H471JA01D
04023J7R5BBS
GRM188R60J475KE19D
GRM1555C1H121JA01D
04023J22R0BBS
04023J2R4BBS
04023J1R8BBS
0603HC--24NXJLW
0603HC--22NXJLW
RC0402JR--071K20L
RC0402JR--07330RL
FR408
Murata
AVX
Murata
Murata
AVX
AVX
AVX
Coilcraft
Coilcraft
Yageo
Yageo
Isola
Part Number
GRM155R61A105KE15
Manufacturer
Murata
(Test Circuit Component Designations and Values table repeated for reference.)
V
BIAS(1)
MMZ25332BT1
4
RF Device Data
Freescale Semiconductor, Inc.
3.00
0.70
0.30
2.00
0.50
1.6 x 1.6 Solder Pad
with Thermal Via
Structure
3.40
Figure 5. PCB Pad Layout for QFN 3x3
MA05
YWZ
Figure 6. Product Marking
MMZ25332BT1
RF Device Data
Freescale Semiconductor, Inc.
5
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