Freescale Semiconductor
Technical Data
Document Number: MMG3008NT1
Rev. 6, 2/2012
Heterojunction Bipolar Transistor
(InGaP HBT)
Broadband High Linearity Amplifier
The MMG3008NT1 is a general purpose amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small--signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 0 to 6000 MHz such as cellular,
P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l
small--signal RF.
Features
•
Frequency: 0 to 6000 MHz
•
P1dB: 15 dBm @ 900 MHz
•
Small--Signal Gain: 18.5 dB @ 900 MHz
•
Third Order Output Intercept Point: 26 dBm @ 900 MHz
•
Single 5 Volt Supply
•
Internally Matched to 50 Ohms
•
Cost--effective SOT--89 Surface Mount Package
•
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
MMG3008NT1
0-
-6000 MHz, 18.5 dB
15 dBm
InGaP HBT
12
3
CASE 1514-
-02, STYLE 1
SOT-
-89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Small--Signal Gain
(S21)
Input Return Loss
(S11)
Output Return Loss
(S22)
Power Output @1dB
Compression
Third Order Output
Intercept Point
Symbol
G
p
IRL
ORL
P1dB
OIP3
900
MHz
18.5
--18
--20
15
26
2140
MHz
16
--22
--18
14
25.5
3500
MHz
13
--20
--16
14
25
Unit
dB
dB
dB
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
CC
I
CC
P
in
T
stg
T
J
Value
6
80
10
--65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
CC
= 5 Vdc, T
A
= 25°C, 50 ohm system.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 86°C, 5 Vdc, 38 mA, no RF applied
Symbol
R
θJC
Value
(3)
84
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.
MMG3008NT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(V
CC
= 5 Vdc, 900 MHz, T
A
= 25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Output Intercept Point
Noise Figure
Supply Current
(1)
Supply Voltage
(1)
Symbol
G
p
IRL
ORL
P1dB
OIP3
NF
I
CC
V
CC
Min
17
—
—
—
—
—
32
—
Typ
18.5
--18
--20
15
26
4
38
5
Max
—
—
—
—
—
—
48
—
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
1. For reliable operation, the junction temperature should not exceed 150°C.
MMG3008NT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Functional Pin Description
Pin
Number
1
2
3
RF
in
Ground
RF
out
/DC Supply
1
2
3
Pin Function
2
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Class
1A
A
IV
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
1
Package Peak Temperature
260
Unit
°C
MMG3008NT1
RF Device Data
Freescale Semiconductor, Inc.
3
50 OHM TYPICAL CHARACTERISTICS
25
G
p
, SMALL--SIGNAL GAIN (dB)
0
S11, S22 (dB)
20
T
C
= 85°C
25°C
--10
S22
--20
--40°C
15
--30
V
CC
= 5 Vdc
0
1
2
f, FREQUENCY (GHz)
3
4
S11
V
CC
= 5 Vdc
10
--40
0
1
2
f, FREQUENCY (GHz)
3
4
Figure 2. Small-
-Signal Gain (S21) versus
Frequency
Figure 3. Input/Output Return Loss versus
Frequency
23
P1dB, 1 dB COMPRESSION POINT (dBm)
21
G
p
, SMALL--SIGNAL GAIN (dB)
19
17
15
13
11
9
7
8
9
10
11
12
V
CC
= 5 Vdc
13
14
15
2600 MHz
3500 MHz
900 MHz
1960 MHz
2140 MHz
17
16
15
14
13
12
11
10
0.5
1
1.5
2
2.5
f, FREQUENCY (GHz)
V
CC
= 5 Vdc
3
3.5
P
out
, OUTPUT POWER (dBm)
Figure 4. Small-
-Signal Gain versus Output
Power
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
80
I
CC
, COLLECTOR CURRENT (mA)
70
60
50
40
30
20
10
0
4
4.2
4.4
4.6
4.8
5
5.2
5.4
V
CC
, COLLECTOR VOLTAGE (V)
30
27
24
21
18
15
0
Figure 5. P1dB versus Frequency
V
CC
= 5 Vdc
1 MHz Tone Spacing
1
2
f, FREQUENCY (GHz)
3
4
Figure 6. Collector Current versus Collector
Voltage
Figure 7. Third Order Output Intercept Point
versus Frequency
MMG3008NT1
4
RF Device Data
Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
33
30
27
24
21
18
4.9
4.95
5
29
28
27
26
25
24
23
22
--40
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
--20
0
20
40
60
80
100
f = 900 MHz
1 MHz Tone Spacing
5.05
5.1
V
CC
, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
10
5
Figure 9. Third Order Output Intercept Point
versus Case Temperature
--30
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--40
--50
--60
--70
--80
--6
V
CC
= 5 Vdc
f = 900 MHz
1 MHz Tone Spacing
MTTF (YEARS)
10
4
10
3
--3
0
3
6
9
12
120
125
130
135
140
145
150
P
out
, OUTPUT POWER (dBm)
T
J
, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with V
CC
= 5 Vdc, I
CC
= 38 mA
Figure 10. Third Order Intermodulation Distortion
versus Output Power
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
--20
--30
--40
--50
--60
--70
--3
0
3
6
9
12
P
out
, OUTPUT POWER (dBm)
V
CC
= 5 Vdc, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
8
NF, NOISE FIGURE (dB)
6
4
2
V
CC
= 5 Vdc
0
0
1
2
f, FREQUENCY (GHz)
3
4
Figure 12. Noise Figure versus Frequency
Figure 13. Single-
-Carrier W-
-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3008NT1
RF Device Data
Freescale Semiconductor, Inc.
5
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