Datasheet> 器件分类 > 分立半导体> 晶体管> CTLDM8002A-M621TR

CTLDM8002A-M621TR: 产品描述Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 1 MM, LEADLESS, CASE TLM621, 6 PIN; 产品类别分立半导体晶体管; 文件大小611KB，共2页; 制造商Central Semiconductor

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CTLDM8002A-M621TR概述

Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 1 MM, LEADLESS, CASE TLM621, 6 PIN

CTLDM8002A-M621TR规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-N6
针数	6
制造商包装代码	CASE TLM621
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	50 V
最大漏极电流 (Abs) (ID)	0.28 A
最大漏极电流 (ID)	0.28 A
最大漏源导通电阻	2.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	7 pF
JESD-30 代码	R-PDSO-N6
JESD-609代码	e0
元件数量	1
端子数量	6
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	0.9 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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CTLDM8002A-M621

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CTLDM8002A-M621 is a Silicon P-Channel

Enhancement-mode MOSFET in a small, thermally

efficient, TLM™ 2x1mm package.

MARKING CODE: CN

FEATURES:

TLM621 CASE

APPLICATIONS:

•

Load/Power Switches

•

Power Supply Converter Circuits

•

Battery Powered Portable Equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

•

Low rDS(on)

Low VDS(on)

Low Threshold Voltage

Fast Switching

Logic Level Compatible

Small TLM™ 2x1mm Package

UNITS

°C

°C/W

SYMBOL

VDS

VDG

VGS

IDM

ISM

TJ, Tstg

otherwise noted)

MIN

280

1.5

0.9

-65 to +150

139

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless

SYMBOL

TEST CONDITIONS

IGSSF, IGSSR VGS=20V, VDS=0

IDSS

VDS=50V, VGS=0

IDSS

VDS=50V, VGS=0, TJ=125°C

ID(ON)

VGS=10V, VDS=10V

BVDSS

VGS=0, ID=10μA

VGS(th)

VDS(ON)

VSD

rDS(ON)

gFS

VDS=VGS, ID=250μA

VGS=10V, ID=500mA

VGS=5.0V, ID=50mA

VGS=0, IS=115mA

VGS=10V, ID=500mA

VGS=10V, ID=500mA, TJ=125°C

VGS=5.0V, ID=50mA

VGS=5.0V, ID=50mA, TJ=125°C

VDS=10V, ID=200mA

MAX

100

1.0

500

UNITS

μA

500

1.0

2.5

1.5

0.15

1.3

2.5

4.0

3.0

5.0

200

Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm

R1 (17-February 2010)

CTLDM8002A-M621TR相似产品对比

	CTLDM8002A-M621TR	CTLDM8002A-M621BK	CTLDM8002A-M621BKLEADFREE	CTLDM8002A-M621TRLAEDFREE
描述	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 1 MM, LEADLESS, CASE TLM621, 6 PIN	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 1 MM, LEADLESS, CASE TLM621, 6 PIN	Transistor	Transistor
Reach Compliance Code	unknown	not_compliant	compliant	compliant
是否Rohs认证	不符合	不符合	符合	-
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single	-
最大漏极电流 (Abs) (ID)	0.28 A	0.28 A	0.28 A	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
最高工作温度	150 °C	150 °C	150 °C	-
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	-
最大功率耗散 (Abs)	0.9 W	0.9 W	0.9 W	-
表面贴装	YES	YES	YES	-

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