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CTLDM8002A-M621BKLEADFREE: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小611KB，共2页; 制造商Central Semiconductor; 标准

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CTLDM8002A-M621BKLEADFREE概述

Transistor

CTLDM8002A-M621BKLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
Reach Compliance Code	compliant
配置	Single
最大漏极电流 (Abs) (ID)	0.28 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	0.9 W
表面贴装	YES
Base Number Matches	1

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CTLDM8002A-M621

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CTLDM8002A-M621 is a Silicon P-Channel

Enhancement-mode MOSFET in a small, thermally

efficient, TLM™ 2x1mm package.

MARKING CODE: CN

FEATURES:

TLM621 CASE

APPLICATIONS:

•

Load/Power Switches

•

Power Supply Converter Circuits

•

Battery Powered Portable Equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

•

Low rDS(on)

Low VDS(on)

Low Threshold Voltage

Fast Switching

Logic Level Compatible

Small TLM™ 2x1mm Package

UNITS

°C

°C/W

SYMBOL

VDS

VDG

VGS

IDM

ISM

TJ, Tstg

otherwise noted)

MIN

280

1.5

0.9

-65 to +150

139

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless

SYMBOL

TEST CONDITIONS

IGSSF, IGSSR VGS=20V, VDS=0

IDSS

VDS=50V, VGS=0

IDSS

VDS=50V, VGS=0, TJ=125°C

ID(ON)

VGS=10V, VDS=10V

BVDSS

VGS=0, ID=10μA

VGS(th)

VDS(ON)

VSD

rDS(ON)

gFS

VDS=VGS, ID=250μA

VGS=10V, ID=500mA

VGS=5.0V, ID=50mA

VGS=0, IS=115mA

VGS=10V, ID=500mA

VGS=10V, ID=500mA, TJ=125°C

VGS=5.0V, ID=50mA

VGS=5.0V, ID=50mA, TJ=125°C

VDS=10V, ID=200mA

MAX

100

1.0

500

UNITS

μA

500

1.0

2.5

1.5

0.15

1.3

2.5

4.0

3.0

5.0

200

Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm

R1 (17-February 2010)

CTLDM8002A-M621BKLEADFREE相似产品对比

	CTLDM8002A-M621BKLEADFREE	CTLDM8002A-M621BK	CTLDM8002A-M621TR	CTLDM8002A-M621TRLAEDFREE
描述	Transistor	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 1 MM, LEADLESS, CASE TLM621, 6 PIN	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 1 MM, LEADLESS, CASE TLM621, 6 PIN	Transistor
Reach Compliance Code	compliant	not_compliant	unknown	compliant
是否Rohs认证	符合	不符合	不符合	-
配置	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
最大漏极电流 (Abs) (ID)	0.28 A	0.28 A	0.28 A	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
最高工作温度	150 °C	150 °C	150 °C	-
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	-
最大功率耗散 (Abs)	0.9 W	0.9 W	0.9 W	-
表面贴装	YES	YES	YES	-

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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