Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
参数名称 | 属性值 |
厂商名称 | Polycore Rf Devices |
包装说明 | , |
Reach Compliance Code | unknown |
配置 | Single |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
工作模式 | ENHANCEMENT MODE |
极性/信道类型 | N-CHANNEL |
表面贴装 | NO |
F1006B | F1013 | F1002 | F1003 | F1003B | F1012 | F1014 | F1020 | |
---|---|---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
厂商名称 | Polycore Rf Devices | Polycore Rf Devices | Polycore Rf Devices | Polycore Rf Devices | Polycore Rf Devices | Polycore Rf Devices | Polycore Rf Devices | Polycore Rf Devices |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
配置 | Single | Single | Single | Single | Single | Single | Single | Single |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大漏极电流 (Abs) (ID) | - | 2 A | 8 A | 6 A | - | 12 A | 4 A | 20 A |
最高工作温度 | - | 200 °C | 200 °C | 200 °C | - | 200 °C | 200 °C | 200 °C |
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