PJA65P03
30V P-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE
FEATURES
• R
DS(ON)
, V
GS
@-2.5V,I
D
@-1A<9 m
• R
DS(ON)
, V
GS
@-4.5V,I
D
@-4A<65 m
• R
DS(ON)
, V
GS
@-10V,I
D
@-4.2A<55 m
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
0.006(0.15)MIN.
30 Volts
CURRENT
4 Amperes
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : 65
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AME T E R
D r a i n-S o ur c e Vo lta g e
Ga te -S o ur c e Vo lta g e
C o nti nuo us D r a i n C ur r e nt ( No te s 1 )
P uls e d D r a i n C ur r e nt
P o we r D i s s i p a ti o n ( No te s 1 )
Typ i c a l The r ma l Re s i s ta nc e ( Note s 1 )
Op e r a ti ng J unc ti o n a nd S to r a g e Te mp e r a tur e Rang e
T
A
=2 5
O
C
T
A
=2 5
O
C
S YMB O L
V
DS
V
GS
I
D
I
D M
P
D
R
JA
T
J
,T
S TG
L IMIT
-3 0
+1 2
-4
-3 0
1 .3 6
125
- 5 5 to + 1 5 0
U N IT S
V
V
A
A
W
O
C /W
O
C
NOTES:
1. Mounted on 1 in
2
FR-4 PCB .
July 02,2012-REV.00
PAGE . 1
PJA65P03
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AME TE R
S ta ti c
D ra i n-S o urce B re a kd o wn Vo lta g e
Ga te Thre sho ld Vo lta g e
B V
DSS
V
GS (th)
V
GS
=0 V, I
D
=-2 5 0A
V
D S
=V
GS
, I
D
=-2 5 0
A
V
GS
= -10V, I
D
= -4.2A
D ra i n-S o urce On-S ta te Re si sta nce
R
D S( on)
V
GS
= -4.5V, I
D
= -4A
V
GS
= -2.5V, I
D
= -1A
Ze ro Ga te Vo lta g e D ra i n C urre nt
Gate -Source Leakage Current
D i o d e F o rwa rd Vo lta g e
Dynamic
To ta l Ga te C ha rg e
Ga te -S o urce C ha rg e
Ga te -D ra i n C ha rg e
Turn-On D e la y Ti me
Turn-Off D e la y Ti m e
Turn-On Ri s e Ti me
Turn-Off Fa ll Ti me
Inp ut C a p a ci ta nce
Outp ut C ap a c i ta nce
Re ve rse Tra ns fe r C a p a ci ta nce
Q
g
Q
gs
Q
gd
td
o n
td
of f
t
r
t
f
C
iss
C
o ss
C
r ss
V
D S
=-1 5 V, V
GS
=0 V
f=1 .0 MH
Z
V
DS
= -1 5 V, I
D
= -4 A
V
GS
= -4.5V
-
-
-
-
-
V
DS
= -15V , V
GS
= -10V,
R
G
= 6.8R
L
= 3.7
-
-
-
-
-
8
2
2
1.2
5 0 .5
2 3 .4
14.2
776
70
61
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
I
D S S
I
GS S
V
SD
V
DS
= -24V, V
GS
=0V
V
GS
= +1 2 V, V
D S
=0 V
I
S
= -1 A , V
GS
=0 V
-3 0
-0 .7
-
-
-
-
-
-
-
-1
46
56
79
-
-
-0 .8
-
-1 .3
55
65
9
-1
+1 0 0
-1
A
nA
V
m
V
V
S YMB OL
T E S T C ON D IT ION
MIN .
T YP.
MAX .
U N IT S
July 02,2012-REV.00
PAGE . 2
PJA65P03
RATING AND CHARACTERISTIC CURVES
Frequency=1MHz
-I
DS
, Drain-to-Source Current(A)
1200
25
V
GS
=-10V
20
15
10
V
GS
=-2.5V
5
V
GS
=-2V
0
0
1
2
3
4
5
V
GS
=-4.5V
C, Capacitance (pF)
1000
800
600
400
200
0
0
5
10
15
20
25
30
C
oss
C
rss
C
iss
V
GS
=-3V
-V
DS
, Drain-to-Source Voltage(V)
-V
DS
, Drain-to-Source Voltage(V)
Fig.1 Capacitance Characteristic
Fig.2 Output Characteristic
-I
DS
, Drain-to-Source Current(A)
9
8
7
6
5
4
3
2
1
0
0
V
DS
=5V
R
DS
(on), On-Resistance(mΩ)
10
120
100
80
V
GS
= -4.5V
60
40
20
0
2
3
4
5
6
7
8
9
V
GS
= -10V
V
GS
= -2.5V
T
A
=125℃
T
A
=25℃
0.5
1
1.5
2
2.5
3
-V
GS
, Gate-to-Source Voltage(V)
-I
DS
, Drain-to-Source Current(A)
Fig.4 On-Resistance vs. Drain Current
Fig.3 Transfer Characteristic
140
120
100
80
60
40
20
0
0
2
4
6
25℃
125℃
I
D
= -2A
R
DS
(on), On-Resistance(mΩ)
R
DS
(on), On-Resistance(mΩ)
160
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
V
GS
=10V, I
D
=3.5A
V
GS
=4.5V, I
D
=3.5A
V
GS
=2.5V, I
D
=1A
8
10
-V
GS
, Gate-to-Source Voltage(V)
Fig.5 On-Resistance vs.
Gate-to-Source Voltage
Temperature (℃)
Fig.6 On-Resistance vs. Junction Temperature
PAGE .
3
July 02,2012-REV.00
PJA65P03
RATING AND CHARACTERISTIC CURVES
-V
GS
, Gate-to-Source Voltage(V)
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
V
DS
= -15V
I
D
=-3.8A
-I
S
, Source- to-Drain Current(A)
0.8
T
J
=125℃
0.6
0.4
T
A
=25℃
0.2
0.0
0.2
0.4
0.6
0.8
1
1.2
-Q
g
(nC)
Fig.7 Gate-Charge Characteristic
-V
SD
, Source-to-Drain Voltage(V)
Fig.8 Body Diode Characteristic
July 02,2012-REV.00
PAGE .
4
PJA65P03
MOUNTING PAD LAYOUT
SOT-23
0.035 MIN.
(0.90) MIN.
Unit
：
inch(mm)
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
0.078
(2.00)
July 02,2012-REV.00
PAGE .
5
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