SIDC30D120H8
Fast switching diode chip in Emitter Controlled -Technology
Features:
•
1200V Emitter Controlled technology
120 µm chip
•
soft, fast switching
•
low reverse recovery charge
•
small temperature coefficient
This chip is used for:
•
EUPEC power modules and
discrete devices
Applications:
•
SMPS, resonant applications,
drives
A
C
Chip Type
SIDC30D120H8
V
R
1200V
I
F
50A
Die Size
5.5 x 5.5 mm
2
Package
sawn on foil
Mechanical Parameters
Raster size
Area total
Anode pad size
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
5.5 x 5.5
30.25
4.78 x 4.78
120
200
892
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al,
≤500µm
∅
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°
C
µm
mm
mm
2
Edited by INFINEON Technologies, IMM PSD, L4057C, Edition 1.1, 08.07.10
SIDC30D120H8
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
Maximum repetitive forward current
Junction temperature range
Operating junction temperature
Dynamic ruggedness²
1)
2)
Symbol
V
RRM
I
F
I
FRM
T
vj
T
vj
P
max
Condition
T
vj
= 25 °
C
T
vj
< 150°
C
T
vj
< 150°
C
Value
1200
1)
Unit
V
A
°C
°C
kW
100
-40...+175
-40...+150
)
I
F m a x
= 100A,
V
R m a x
=
1200V,
T
vj
≤
150°
C
tbd
depending on thermal properties of assembly
not subject to production test - verified by design/characterisation
Static Characteristics
(tested on wafer),
T
vj
= 25 °
C
Parameter
Reverse leakage current
Cathode-Anode
breakdown Voltage
Diode forward voltage
Symbol
I
R
V
BR
V
F
Conditions
V
R
= 1 20 0 V
I
R
= 2m A
I
F
= 50 A
1200
1.6
Value
min.
typ.
max.
27
Unit
µA
V
V
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Edited by INFINEON Technologies, IMM PSD, L4057C, Edition 1.1, 08.07.10
SIDC30D120H8
Chip Drawing
A
A: Anode pad
Edited by INFINEON Technologies, IMM PSD, L4057C, Edition 1.1, 08.07.10
SIDC30D120H8
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Edited by INFINEON Technologies, IMM PSD, L4057C, Edition 1.1, 08.07.10
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