6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
6 A, 600 V, 硅, 桥式整流二极管
参数名称 | 属性值 |
Package | GBU |
Maximum recurrent peak reverse voltage | 600 |
Maximum average forward rectified current | 4 |
Peak forward surge current | 200 |
Maximum instantaneous forward voltage | 1 |
Maximum reverse current | 5 |
TJ(℃) | -55~+150 |
GBU8J | GBU8A | GBU8B | GBU8D | GBU8G | GBU8K | GBU8M | |
---|---|---|---|---|---|---|---|
描述 | 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE | 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
Package | GBU | GBU | GBU | GBU | GBU | GBU | GBU |
Maximum recurrent peak reverse voltage | 600 | 50 | 100 | 200 | 400 | 800 | 1000 |
Maximum instantaneous forward voltage | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
TJ(℃) | -55~+150 | -55~+150 | -55~+150 | -55~+150 | -55~+150 | -55~+150 | -55~+150 |
Maximum average forward rectified current | 4 | 4 | 4 | 4 | 4 | 4 | - |
Peak forward surge current | 200 | 200 | 200 | 200 | 200 | 200 | - |
Maximum reverse current | 5 | 5 | 5 | 5 | 5 | 5 | - |
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