3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
参数名称 | 属性值 |
Package | GBJ |
Maximum recurrent peak reverse voltage | 600 |
Maximum average forward rectified curre | 7.5 |
Peak forward surge curre | 240 |
Maximum instantaneous forward voltage | 1.05 |
Maximum reverse curre | 10 |
TJ(℃) | -65~+150 |
GBJ1506 | GBJ15005 | GBJ1501 | GBJ1502 | GBJ1504 | GBJ1508 | GBJ1510 | |
---|---|---|---|---|---|---|---|
描述 | 3.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 3.2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE | 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE | 15 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE | 3.2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE | 3.2 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE | 3.2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
Package | GBJ | GBJ | GBJ | GBJ | GBJ | GBJ | GBJ |
Maximum recurrent peak reverse voltage | 600 | 50 | 100 | 200 | 400 | 800 | 1000 |
Maximum average forward rectified curre | 7.5 | 7.5 | 7.5 | 7.5 | 7.5 | 7.5 | 7.5 |
Peak forward surge curre | 240 | 240 | 240 | 240 | 240 | 240 | 240 |
Maximum instantaneous forward voltage | 1.05 | 1.05 | 1.05 | 1.05 | 1.05 | 1.05 | 1.05 |
Maximum reverse curre | 10 | 10 | 10 | 10 | 10 | 10 | 10 |
TJ(℃) | -65~+150 | -65~+150 | -65~+150 | -65~+150 | -65~+150 | -65~+150 | -65~+150 |
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