VS-10CWH02FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt
®
FEATURES
Base
common
cathode
2
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Q
rr
and soft
recovery
3
Anode
1
2
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
D-PAK (TO-252AA)
Common
Anode
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
D-PAK (TO-252AA)
2x5A
200 V
0.98 V
23 ns
175 °C
Common cathode
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 160 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
200
10
80
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
I
R
= 100 μA
I
F
= 5 A
Forward voltage
V
F
I
F
= 10 A
I
F
= 5 A, T
J
= 150 °C
I
F
= 10 A, T
J
= 150 °C
V
R
= V
R
rated
Reverse leakage current per leg
I
R
C
T
L
S
T
J
= 125 °C, V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
Junction capacitance per leg
Series inductance
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
-
-
TYP.
-
0.90
0.98
0.74
0.84
-
-
-
17
8
MAX.
-
0.98
1.15
0.84
1.05
4
40
80
-
-
pF
nH
μA
V
UNITS
Document Number: 93263
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CWH02FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 5 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
TYP.
23
21
26
2
3.1
20
41
MAX.
27
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
per leg
Thermal resistance,
junction to case
per device
Approximate weight
Marking device
Case style D-PAK (TO-252AA)
SYMBOL
T
J
, T
Stg
R
thJC
TEST CONDITIONS
MIN.
- 65
-
-
TYP.
-
2.7
1.35
0.3
0.01
10CWH02FN
MAX.
175
3.2
1.6
UNITS
°C
°C/W
g
oz.
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2
For technical questions within your region, please contact one of the following:
Document Number: 93263
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CWH02FN-M3
Hyperfast Rectifier, 2 x 5 A FRED Pt
®
Vishay Semiconductors
100
Reverse Current - I
R
(μA)
100
Tj = 175°C
10
1
0.1
0.01
Tj = 150°C
Tj = 125°C
Tj = 100°C
Tj = 75°C
Tj = 50°C
Tj = 25°C
Tj = 175°C
Instantaneous Forward Current - I
F
(A)
10
0.001
0.0001
50
100
150
200
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
Tj = 125°C
Tj = 25°C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Junction Capacitance - C
T
(pF)
10
0
50
100
150
200
1
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
1
D = 02
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93263
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CWH02FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt
®
40
35
30
180
Allowable Case Temperature (°C)
170
DC
trr ( nC )
25
20
15
10
5A, Tj = 125°C
160
Square wave (D=0.50)
rated Vr applied
150
5A, Tj = 25°C
see note (1)
140
0
1
2
3
4
5
6
7
8
Average Forward Current - I
F
(AV)
(A)
5
0
100
1000
di
F
/dt (A/μs )
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
70
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
60
RMS Limit
Average Power Loss ( Watts )
50
5A, Tj = 125°C
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
Qrr ( nC )
40
30
20
5A, Tj = 25°C
10
3
4
5
6
7
8
0
100
1000
Average Forward Current - I
F
(AV)
(A)
di
F
/dt (A/μs )
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
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4
For technical questions within your region, please contact one of the following:
Document Number: 93263
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CWH02FN-M3
Hyperfast Rectifier, 2 x 5 A FRED Pt
®
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93263
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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