SiC780, SiC780A
www.vishay.com
Vishay Siliconix
Integrated DrMOS Power Stage
DESCRIPTION
The SiC780 is an integrated power stage solution
optimized for synchronous buck applications offering high
current, high efficiency and high power density. Packaged in
Vishay's proprietary 6 mm x 6 mm MLP package, SiC780
enables voltage regulator designs to deliver in excess of
50 A per phase current with 93 % peak efficiency.
The
internal
Power
MOSFETs
utilize
Vishay’s
state-of-the-art TrenchFET Gen III technology that delivers
industry benchmark performance by significantly reducing
switching and conduction losses.
The SiC780 incorporates an advanced MOSFET gate driver
IC that features high current driving capability, adaptive
dead-time control, and integrated bootstrap Schottky
diode, and a thermal warning (THDN) that alerts the system
of excessive junction temperature. The driver is also
compatible with a wide range of PWM controllers and
supports Tri-state PWM, 3.3 V (SiC780ACD)/5 V (SiC780CD)
PWM logic, and skip mode (SMOD) to improve light load
efficiency.
FEATURES
• Thermally enhanced PowerPAK MLP6x6-40L
package
• Industry benchmark MOSFET with integrated
Schottky diode
• Delivers in excess of 50 A continuous current
• 93 % peak efficiency
• High frequency operation up to 1 MHz
• Power MOSFETs optimized for 12 V input stage
• 3.3 V (SiC780ACD)/5 V (SiC780CD) PWM logic with
Tri-state and hold-off
• SMOD logic for light load efficiency boost
• Low PWM propagation delay (< 20 ns)
• Thermal monitor flag
• Enable feature
• V
CIN
UVLO
• Compliant with Intel DrMOS 4.0 specification
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous buck converters
• Multi-phase VRDs for CPU, GPU and memory
• DC/DC POL modules
TYPICAL APPLICATION DIAGRAM
Fig. 1 - SiC780 Typical Application Diagram
S14-1497-Rev. D, 04-Aug-14
Document Number: 63788
1
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiC780, SiC780A
www.vishay.com
PIN CONFIGURATION
- Bottom View
Vishay Siliconix
Fig. 2 - SiC780 Pin Configuration
PIN DESCRIPTION
PIN NUMBER
1
2
3
4
5, 37, P1
6
7
8 to 14, P2
15, 29 to 35, P3
16 to 28
36
38
39
40
SYMBOL
SMOD#
V
CIN
V
DRV
BOOT
C
GND
GH
PHASE
V
IN
V
SWH
P
GND
GL
THDN
DSBL#
PWM
DESCRIPTION
LS FET turn-off logic. Active low
Supply voltage for internal logic circuitry
Supply voltage for internal gate driver
High side driver bootstrap voltage
Analog ground for the driver IC
High side gate signal
Return path of HS gate driver
Power stage input voltage. Drain of high side MOSFET
Phase node of the power stage
Power ground
Low side gate signal
Thermal shutdown open drain output
Disable pin. Active low
PWM input logic
S14-1497-Rev. D, 04-Aug-14
Document Number: 63788
2
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiC780, SiC780A
www.vishay.com
Vishay Siliconix
ORDERING INFORMATION
PART NUMBER
SiC780CD-T1-GE3
SiC780ACD-T1-GE3
SiC780DB
PACKAGE
PowerPAK MLP66-40L
PowerPAK MLP66-40L
Reference Board
MARKING CODE
SiC780
SiC780A
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL PARAMETER
Input Voltage
Control Input Voltage
Drive Input Voltage
Switch Node (DC)
Switch Node (AC)
(2)
(1)
SYMBOL
V
IN
V
CIN
V
DRV
V
SW
V
SW
V
BS
V
BS_SW
T
J
T
A
LIMITS
-0.3 to +22
-0.3 to +7
-0.3 to +7
-0.3 to +22
-7 to +27
-0.3 to +29
-0.3 to +7
-0.3 to V
CIN
+ 0.3
150
-40 to +125
-65 to +150
UNIT
V
Boot Voltage (DC Voltage)
Boot to Switching Node (DC Voltage)
All Logic Inputs and Outputs (PWM, DSBL, SMOD and THDN)
Max. Operating Junction Temperature
Ambient Temperature
Storage Temperature
°C
Notes
(1)
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
(2)
The specification values indicated “AC” is V
SW
to P
GND
-7 V to +27 V (< 50 ns), max..
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Input Voltage (V
IN
)
Drive Input Voltage (V
DRV
)
Control Input Voltage (V
CIN
)
Switching Node (LX, DC Voltage)
BOOT-SW
MIN.
4.5
4.5
4.5
-
4
TYP.
-
5
5
-
4.5
MAX.
18
5.5
5.5
19
5.5
V
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Thermal Resistance from Junction to Case (to P3 PAD (V
SHW
)
Thermal Resistance from Junction to PCB
MIN.
-
-
TYP.
2.5
5
MAX.
-
-
UNIT
°C/W
S14-1497-Rev. D, 04-Aug-14
Document Number: 63788
3
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiC780, SiC780A
www.vishay.com
Vishay Siliconix
ELECTRICAL SPECIFICATIONS
PARAMETER
Power Supplies
V
DSBL#
= 0 V, no switching
V
CIN
Control Logic Input Current
I
VCIN
V
DSBL#
= 5 V, no switching
V
DSBL#
= 5 V, f
s
= 300 kHz, D = 0.1
Drive Input Current (Dynamic)
I
VDRV
Drive Input Current (No Switching)
Bootstrap Supply
Bootstrap Switch Forward Voltage
PWM Control Input (SiC780CD)
Rising Threshold
Falling Threshold
Tri-state Voltage
Tri-state Rising Threshold
Tri-state Falling Threshold
Tri-state Rising Threshold Hysteresis
Tri-state Falling Threshold Hysteresis
PWM Input Current
PWM Control Input (SiC780ACD)
Rising Threshold
Falling Threshold
Tri-state Voltage
Tri-state Rising Threshold
Tri-state Falling Threshold
Tri-state Rising Threshold Hysteresis
Tri-state Falling Threshold Hysteresis
PWM Input Current
V
th_pwm_r
V
th_pwm_f
V
tri
V
th_tri_r
V
th_tri_f
V
hys_tri_r
V
hys_tri_f
I
PWM
V
PWM
= 3.3 V
V
PWM
= 0 V
PWM pin floating
2.1
0.7
-
0.9
1.9
-
-
-
-
2.4
0.9
1.8
-
2.2
225
275
-
-
2.8
1.2
-
1.5
2.6
-
-
300
-300
mV
V
V
th_pwm_r
V
th_pwm_f
V
tri
V
th_tri_r
V
th_tri_f
V
hys_tri_r
V
hys_tri_f
I
PWM
V
PWM
= 5 V
V
PWM
= 0 V
PWM pin floating
3.4
0.7
-
0.9
3
-
-
-
-
3.7
0.9
2.3
-
3.4
225
325
-
-
4.2
1.2
-
1.5
3.7
-
-
500
-500
mV
V
V
F
V
CIN
= 5 V, forward bias current 2 mA
-
-
0.4
V
f
s
= 300 kHz, D = 0.1
f
s
= 1 MHz, D = 0.1
V
DSBL#
= 0 V, no switching
V
DSBL#
= 5 V, no switching
-
-
-
-
-
-
-
100
300
300
16
60
30
60
-
-
-
25
-
-
-
mA
μA
SYMBOL
TEST CONDITIONS UNLESS SPECIFIED
V
DSBL#
= V
SMOD
= 5 V,
V
IN
= 12 V, V
DRV
= V
CIN
= 5 V,
T
A
= 25 °C
MIN.
(3)
TYP.
(1)
MAX.
(3)
UNIT
μA
μA
μA
S14-1497-Rev. D, 04-Aug-14
Document Number: 63788
4
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiC780, SiC780A
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER
Timing Specifications
Tri-State to GH/GL Rising Propagation
Delay
Tri-state Hold-Off Time
GH - Turn Off Propagation Delay
GH - Turn ON Propagation Delay
(Dead Time Rising)
GL - Turn Off Propagation Delay
GL - Turn On Propagation Delay
(Dead Time Falling)
DSBL# Hi to GH/GL Rising Propagation
Delay
DSBL# Lo to GH/GL Falling
Propagation Delay
DSBL#, SMOD INPUT
DSBL# Logic Input Voltage
V
DSBL
Enable
Disenable
High State
Low State
2
-
2
-
-
-
-
-
-
0.8
-
0.8
V
T
PD_R_Tri
T
TSHO
T
PD_OFF_GH
T
PD_ON_GH
T
PD_OFF_GL
T
PD_ON_GL
T
PD_R_DSBL
T
PD_F_DSBL
No load, see fig. 4.
-
-
-
-
-
-
-
-
20
150
20
10
20
10
22
10
-
-
-
-
-
-
-
-
ns
SYMBOL
TEST CONDITIONS UNLESS SPECIFIED
V
DSBL#
= V
SMOD
= 5 V,
V
IN
= 12 V, V
DRV
= V
CIN
= 5 V,
T
A
= 25 °C
MIN.
(3)
TYP.
(1)
MAX.
(3)
UNIT
Vishay Siliconix
SMOD Logic Input Voltage
ProtectionL
Under Voltage Lockout
Under Voltage Lockout Hysteresis
THDn Flag Set
THDn Flag Clear
THDn Flag Hysteresis
THDn Output Low
V
SMOD
V
UVLO
Rising, On Threshold
Falling, Off Threshold
-
2.7
-
3.7
3.2
550
160
135
25
0.02
4.3
-
-
-
-
-
-
V
mV
Note (2)
-
-
-
-
°C
V
Notes
(1)
Typical limits are established by characterization and are not production tested.
(2)
Guaranteed by design.
(3)
Min. and max. parameters are not 100 % production tested.
S14-1497-Rev. D, 04-Aug-14
Document Number: 63788
5
For technical questions, contact:
powerictechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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