TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal
| 参数名称 | 属性值 |
| 厂商名称 | Microwave_Technology_Inc. |
| 包装说明 | UNCASED CHIP, R-XUUC-N4 |
| Reach Compliance Code | unknown |
| 其他特性 | LOW NOISE |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 6 V |
| FET 技术 | METAL SEMICONDUCTOR |
| 最高频带 | K BAND |
| JESD-30 代码 | R-XUUC-N4 |
| 元件数量 | 1 |
| 端子数量 | 4 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | UNCASED CHIP |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | UPPER |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE |
| MWT-4GN | MWT-473SN | MWT-473GN | MWT-4SN | MWT-470GN | |
|---|---|---|---|---|---|
| 描述 | TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET |
| 包装说明 | UNCASED CHIP, R-XUUC-N4 | MICROWAVE, X-CXMW-F4 | MICROWAVE, X-CXMW-F4 | UNCASED CHIP, R-XUUC-N4 | MICROWAVE, S-CQMW-F4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 6 V | 6 V | 6 V | 6 V | 6 V |
| FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| 最高频带 | K BAND | K BAND | K BAND | K BAND | K BAND |
| JESD-30 代码 | R-XUUC-N4 | X-CXMW-F4 | X-CXMW-F4 | R-XUUC-N4 | S-CQMW-F4 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 4 | 4 | 4 | 4 | 4 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 封装主体材料 | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | UNSPECIFIED | UNSPECIFIED | RECTANGULAR | SQUARE |
| 封装形式 | UNCASED CHIP | MICROWAVE | MICROWAVE | UNCASED CHIP | MICROWAVE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | NO LEAD | FLAT | FLAT | NO LEAD | FLAT |
| 端子位置 | UPPER | UNSPECIFIED | UNSPECIFIED | UPPER | QUAD |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| 厂商名称 | Microwave_Technology_Inc. | Microwave_Technology_Inc. | - | - | Microwave_Technology_Inc. |
| 最高工作温度 | 150 °C | 175 °C | - | 150 °C | 175 °C |
| 外壳连接 | - | SOURCE | SOURCE | - | SOURCE |
| Base Number Matches | - | 1 | 1 | 1 | - |
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