RN1972CT,RN1973CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1972CT,RN1973CT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
0.2±0.03
Unit: mm
1.0±0.05
0.15±0.03
•
•
0.9±0.05
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN2972CT, RN2973CT
１
0.2±0.03
２
３
0.35±0.02
0.35±0.02
0.075±0.03
0.7±0.03
•
Equivalent Circuit
C
CST6
B
R1
1.EMITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
JEDEC
JEITA
TOSHIBA
E
―
―
2-1K1A
Weight: 1.0 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C(Note 1)
T
j
T
stg
Rating
20
20
5
50
140
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(top view)
5
4
Q2
6
Q1
1
2
3
Note 1: Total rating
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-05-11
0.38 +0.02
-0.03
0.6±0.02
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
６
５
４
0.05±0.03
RN1972CT,RN1973CT
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1972CT
RN1973CT
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
=
20 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
300
⎯
⎯
17.6
37.6
1.2
22
47
Typ.
⎯
⎯
⎯
Max
100
100
⎯
0.15
⎯
26.4
56.4
V
pF
kΩ
Unit
nA
nA
2
2009-05-11
RN1972CT,RN1973CT
RN1112CT
RN1972CT
100
IC - VI(ON)
10000
RN1972CT
RN1112CT
IC - VI(OFF)
COLLECTOR CURRENT IC (mA)
Ta=100°C
10
COLLECTOR CURRENT IC (μA)
1000
Ta=100°C
100
25
-25
25
1
-25
EMITTER COMMON
VCE=0.2V
1
10
INPUT VOLTAGE VI(ON) (V)
100
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
0.1
0.1
RN1113CT
RN1973CT
100
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1113CT
RN1973CT
IC - VI(OFF)
COLLECTOR CURRENT IC (mA)
10
Ta=100°C
1000
Ta=100°C
25
-25
100
25
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
-25
EMITTER COMMON
VCE=0.2V
0.1
0.1
1
10
100
INPUT ON VOLTAGE VI(ON) (V)
INPUT ON VOLTAGE VI(OFF) (V)
3
2009-05-11
RN1972CT,RN1973CT
RN1112CT
RN1972CT
1000
hFE - IC
COLLECTOR - EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
1000
RN1972CT
RN1112CT
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
25
-25
100
100
Ta=100°C
10
25
-25
1
0.1
EMITTER COMMON
IC / IB=20
100
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
10
COLLECTOR CURRENT IC (mA)
RN1113CT
RN1973CT
1000
hFE - IC
Ta=100°C
COLLECTOR - EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
1000
RN1113CT
RN1973CT
VCE(sat) - IC
DC CURRENT GAIN hFE
25
-25
100
100
Ta=100°C
10
-25
25
EMITTER COMMON
IC / IB=20
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
4
2009-05-11
RN1972CT,RN1973CT
Type Name
Marking
Type name
RN1972CT
JH
Type name
RN1973CT
JJ
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2009-05-11
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
