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RN1970FS

产品描述Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
产品类别分立半导体    晶体管   
文件大小112KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN1970FS概述

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1970FS规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)0.05 A
集电极-发射极最大电压20 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)300
JESD-30 代码R-PDSO-F6
JESD-609代码e0
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
最大功率耗散 (Abs)0.05 W
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON

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RN1970FS,RN1971FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1970FS,RN1971FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN2970FS, RN2971FS
0.48
-0.04
+0.02
Unit: mm
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
0.35 0.35
1.0±0.05
0.7±0.05
1
2
3
6
5
4
0.1±0.05
Equivalent Circuit and Bias Resistor Values
fS6
JEDEC
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
2-1F1C
Absolute Maximum Ratings
(Ta = 25°C)
(Q1,Q2 comoon)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
20
20
5
50
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEITA
TOSHIBA
Weight: 0.001 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
1
2007-11-01

RN1970FS相似产品对比

RN1970FS RN1971FS
描述 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
厂商名称 Toshiba(东芝) Toshiba(东芝)
包装说明 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
针数 6 6
Reach Compliance Code unknow unknow
ECCN代码 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
最大集电极电流 (IC) 0.05 A 0.05 A
集电极-发射极最大电压 20 V 20 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 300 300
JESD-30 代码 R-PDSO-F6 R-PDSO-F6
JESD-609代码 e0 e0
元件数量 2 2
端子数量 6 6
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 0.05 W 0.05 W
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 TIN LEAD TIN LEAD
端子形式 FLAT FLAT
端子位置 DUAL DUAL
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON

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