RN1107CT ~ RN1109CT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107CT,RN1108CT,RN1109CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
１
0.25±0.03
２
•
Complementary to RN2107CT to RN2109CT
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1107CT
RN1108CT
R2
RN1109CT
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
0.35±0.02
0.15±0.03
0.65±0.02
0.05±0.03
•
Incorporating a bias resistor into a transistor reduces the number of
parts, which enable the manufacture of ever more compact
equipment and saves assembly cost.
３
B
R1
CST3
JEDEC
JEITA
TOSHIBA
1.BASE
2.EMITTER
3.COLLECTOR
―
―
2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1107CT to RN1109CT
RN1107CT
Emitter-base voltage
RN1108CT
RN1109CT
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107CT to RN1109CT
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
20
20
6
7
15
50
50
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-13
0.38 +0.02
-0.03
0.05±0.03
RN1107CT ~ RN1109CT
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
RN1107CT to 1109CT
RN1107CT
Emitter cut-off current
RN1108CT
RN1109CT
RN1107CT
DC current gain
RN1108CT
RN1109CT
Collector-emitter
saturation voltage
RN1107CT to 1109CT
RN1107CT
Input voltage (ON)
RN1108CT
RN1109CT
RN1107CT
Input voltage (OFF)
RN1108CT
RN1109CT
Collector output
capacitance
RN1107CT to 1109CT
RN1107CT
Input resistor
RN1108CT
RN1109CT
RN1107CT
Resistor ratio
RN1108CT
RN1109CT
R1/R2
⎯
R1
⎯
C
ob
V
CB
=
10 V, I
E
=
0,
f
=
1 MHz
V
I (OFF)
V
CE
=
5 V, I
C
=
0.1 mA
V
I (ON)
V
CE
=
0.2 V, I
C
=
5 mA
V
CE (sat)
I
C
=
5 mA, I
B
=
0.25 mA
h
FE
V
CE
=
5 V, I
C
=
10 mA
I
EBO
Symbol
I
CBO
I
CEO
Test Condition
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
EB
=
7 V, I
C
=
0
V
EB
=
15 V, I
C
=
0
Min
⎯
⎯
0.088
0.085
0.182
120
120
100
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
Max
100
500
0.131
0.126
0.271
⎯
mA
Unit
nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
10
22
47
0.213
0.468
2.14
⎯
⎯
0.15
1.5
2.2
5.0
1.0
1.1
2.6
V
V
V
⎯
0.7
0.8
1.6
0.5
0.6
1.3
⎯
8
17.6
37.6
0.17
0.374
1.71
⎯
12
26.4
56.4
0.255
0.562
2.56
pF
kΩ
2
2009-04-13
RN1107CT ~ RN1109CT
RN1107CT
100
COLLECTOR CURRENT IC (mA)
RN1107CT
10000
COLLECTOR CURRENT IC (μA)
COMMON EMITTER
VCE=5V
1000
Ta=100°C
25
-25
IC - VI(ON)
IC - VI(OFF)
Ta=100°C
10
25
1
-25
COMMON EMITTER
VCE=0.2V
100
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
RN1108CT
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1108CT
IC - VI(OFF)
COMMON EMITTER
VCE=5V
10
Ta=100°C
1000
Ta=100°C
25
-25
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
100
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
INPUT VOLTAGE VI(OFF) (V)
RN1109CT
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
RN1109CT
IC - VI(OFF)
COMMON EMITTER
VCE=5V
COLLECTOR CURRENT IC (μA)
10
Ta=100°C
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
1000
Ta=100°C
25
-25
100
10
0.6
1
1.4
1.8
2.2
2.6
3
INPUT VOLTAGE VI(OFF) (V)
3
2009-04-13
RN1107CT ~ RN1109CT
RN1107CT
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
Ta=100°C
DC CURRENT GAIN hFE
hFE - IC
1000
COMMON EMITTER
IC / IB = 20
RN1107CT
VCE(sat) - IC
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
RN1108CT
100
RN1108CT
1000
Ta=100°C
hFE - IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
1000
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
DC CURRENT GAIN hFE
25
100
-25
100
Ta=100°C
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
COMMON EMITTER
VCE = 5V
10
1
10
100
COLLECTOR CURRENT IC (mA)
RN1109CT
1000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1109CT
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
DC CURRENT GAIN hFE
Ta=100°C
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
4
2009-04-13
RN1107CT ~ RN1109CT
Type Name
Marking
Type name
1
RN1107CT
L6
2
3
Type name
RN1108CT
1
L7
2
3
Type name
RN1109CT
1
L8
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2009-04-13
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
