PD -9.1226
IRFD320
HEXFET
®
Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
HD-1
V
DSS
= 400V
R
DS(on)
= 1.8
Ω
I
D
= 0.49A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10 V
Continuous Drain Current, V
GS
@ 10 V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.49
0.31
3.9
1.0
0.0083
±20
48
0.49
0.10
4.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θ
JA
Junction-to-Ambient
Min.
—
Typ.
—
Max.
120
Units
°C/W
Revision 0
IRFD320
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units Conditions
400
—
—
V
V
GS
= 0V, ID = 250µA
— 0.51 —
V/°C Reference to 25°C, I
D
= 1mA
—
—
1.8
V
GS
= 10.0V, I
D
= 0.21A
Ω
—
—
V
GS
= V, I
D
= A
2.0
—
4.0
V
V
DS
= V
GS
, I
D
= 250µA
1.7
—
—
S
V
DS
= 50V, I
D
= 1.2A
—
—
25
V
DS
= 400V, V
GS
= 0V
µA
—
— 250
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
—
— 100
V
GS
= 20V
nA
—
— -100
V
GS
= -20V
—
—
20
I
D
= 2.0A
—
—
3.3
nC V
DS
= 320V
—
—
11
V
GS
= 10V, See Fig. 6 and 13
—
10
—
V
DD
= 200V
—
14
—
I
D
= 3.3A
ns
—
30
—
R
G
= 18Ω
—
13
—
R
D
= 56Ω, See Fig. 10
—
4.0
—
Between lead,
6mm (0.25in.)
nH
—
6.0
—
from package
and center of
die contact
— 410
—
V
GS
= 0V
— 120
—
pF
V
DS
= 25V
—
47
—
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units Conditions
MOSFET symbol
—
— 0.49
showing the
A
integral reverse
—
—
3.9
p-n junction diode.
—
—
1.6
V
T
J
= 25°C, I
S
= 0.49A, V
GS
= 0V
— 270 600
ns
T
J
= 25°C, I
F
= 3.3A
—
1.4 3.0
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
2.0A, di/dt
≤
40A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
V
DD
= 50V, starting T
J
= 25°C, L = 21mH
R
G
= 25Ω, I
AS
= 2.0A. (See Figure 12)
IRFD320
I
D
, Drain Current (Amps)
Fig 1.
Typical Output Characteristics,
T
C
= 25
o
C
I
D
, Drain Current (Amps)
Fig 2.
Typical Output Characteristics,
T
C
= 150
o
C
Fig 3.
Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain Current (Amps)
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFD320
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
V
GS
, Gate-to-Source Voltage (volts)
Capacitance (pF)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
I
SD
, Reverse Drain Current (Amps)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
I
D
, Drain Current (Amps)
Fig 8.
Maximum Safe Operating Area
IRFD320
I
D
, Drain Current (Amps)
Fig 10a.
Switching Time Test Circuit
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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