SRAM Module, 64KX32, 30ns, CMOS,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | EDI [Electronic devices inc.] |
| Reach Compliance Code | unknown |
| 最长访问时间 | 30 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XZMA-T64 |
| JESD-609代码 | e0 |
| 内存密度 | 2097152 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 32 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 64 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 64KX32 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | ZIP |
| 封装等效代码 | ZIP64/68,.1,.1 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 14.732 mm |
| 最大待机电流 | 0.16 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.98 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 1.27 mm |
| 端子位置 | ZIG-ZAG |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| EDI8F3265C30MZI | EDI8F3265C30MZC | EDI8F3265C55MZI | EDI8F3265C55MZC | EDI8F3265C30MMC | EDI8F3265C30MMI | EDI8F3265C55MMC | EDI8F3265C55MMI | |
|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 64KX32, 30ns, CMOS, | SRAM Module, 64KX32, 30ns, CMOS, MODULE, ZIP-64 | SRAM Module, 64KX32, 55ns, CMOS, | SRAM Module, 64KX32, 55ns, CMOS, MODULE, ZIP-64 | SRAM Module, 64KX32, 30ns, CMOS, SIMM-64 | SRAM Module, 64KX32, 30ns, CMOS, | SRAM Module, 64KX32, 55ns, CMOS, SIMM-64 | SRAM Module, 64KX32, 55ns, CMOS, |
| 厂商名称 | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最长访问时间 | 30 ns | 30 ns | 55 ns | 55 ns | 30 ns | 30 ns | 55 ns | 55 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XZMA-T64 | R-XZMA-T64 | R-XZMA-T64 | R-XZMA-T64 | R-XSMA-N64 | R-XSMA-N64 | R-XSMA-N64 | R-XSMA-N64 |
| 内存密度 | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 70 °C | 85 °C | 70 °C | 70 °C | 85 °C | 70 °C | 85 °C |
| 组织 | 64KX32 | 64KX32 | 64KX32 | 64KX32 | 64KX32 | 64KX32 | 64KX32 | 64KX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | ZIP | ZIP | ZIP | ZIP | SIMM | SIMM | SIMM | SIMM |
| 封装等效代码 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 | SSIM64 | SSIM64 | SSIM64 | SSIM64 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 14.732 mm | 14.732 mm | 14.732 mm | 14.732 mm | 13.335 mm | 13.335 mm | 13.335 mm | 13.335 mm |
| 最大待机电流 | 0.16 A | 0.16 A | 0.16 A | 0.16 A | 0.16 A | 0.16 A | 0.16 A | 0.16 A |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.98 mA | 0.98 mA | 0.98 mA | 0.98 mA | 0.98 mA | 0.98 mA | 0.98 mA | 0.98 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | SINGLE | SINGLE | SINGLE | SINGLE |
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