< Silicon RF Power MOS FET (Discrete)
>
RD30HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,30W
DESCRIPTION
RD30HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
7.2+/-0.5
OUTLINE
DRAWING
22.0+/-0.3
18.0+/-0.3
7.6+/-0.3
4-C1
High power gain:
Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
High Efficiency: 60%typ.
2.8+/-0.3
2
3
R1.6
14.0+/-0.4
FEATURES
1
6.6+/-0.3
For output stage of high power amplifiers in VHF band
Mobile radio sets.
3.0+/-0.4
5.1+/-0.5
APPLICATION
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
RoHS COMPLIANT
RD30HVF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
junction to case
CONDITIONS
RATINGS
30
+/-20
75
2.5
7
175
-40 to +175
2.0
UNIT
V
V
W
W
A
°C
°C
°C/W
Note 1: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
2.3+/-0.3
0.10
< Silicon RF Power MOS FET (Discrete)
>
RD30HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,30W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
D
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz ,V
DD
=12.5V
Pin=1.0W, Idq=0.5A
V
DD
=15.2V,Po=30W(PinControl)
f=175MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
LIMITS
MIN
-
-
1.3
30
55
TYP
-
-
1.8
35
60
No destroy
MAX.
130
1
2.3
-
-
uA
uA
V
W
%
-
UNIT
Note : Above parameters , ratings , limits and conditions are subject to change.
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD30HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,30W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
100
CHANNEL DISSIPATION Pch(W)
...
80
60
40
20
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
8
6
4
2
0
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
Vgs=5.5V
Ids(A)
Vds VS. Ciss CHARACTERISTICS
200
180
Vgs=5V
8
6
Ids(A)
160
140
Ciss(pF)
Ta=+25°C
f=1MHz
Vgs=4.5V
120
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
4
2
Vgs=4V
Vgs=3.5V
Vgs=3V
0
0
2
4
6
Vds(V)
8
10
Vds VS. Coss CHARACTERISTICS
140
120
100
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
16
12
8
4
0
80
60
40
20
0
0
5
10
Vds(V)
15
20
Crss(pF)
0
5
10
Vds(V)
15
20
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete)
>
RD30HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,30W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
Pin-Po CHARACTERISTICS
50
100
Po
50
Po(dBm) , Gp(dB) , Idd(A)
Po
100
40
80
η
½
80
60
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
Idd
40
30
20
10
0
0
Pout(W) , Idd(A)
Gp
ηd(%)
40
20
0
10
20
Pin(dBm)
30
20
10
0
0
0.5
1
1.5
Pin(W)
40
20
0
2.5
Ｉ½½
2
Vdd-Po CHARACTERISTICS
80
Ta=25°C
f=175MHz
Pin=1.0W
Idq=0.5A
Zg=ZI=50 ohm
Po
Vgs-Ids CHARACTERISTICS 2
16
14
12
10
Idd(A)
Ids(A)
8
Vds=10V
Tc=-25~+75°C
6
+75°C
4
-25°C
+25°C
60
Po(W)
40
Idd
8
6
4
2
20
2
0
4
6
8
10
Vdd(V)
12
14
0
0
2
3
Vgs(V)
4
5
Publication Date : Oct．2011
4
ηd(%)
60
30
ηd
< Silicon RF Power MOS FET (Discrete)
>
RD30HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor,175MHz,30W
TEST CIRCUIT(f=175MHz)
Vdd
Vgg
C1
9.1kOHM
L1
C3
100OHM
8.2kOHM
L1
RF-in
56pF
100pF
100pF
10pF
175MHz
RD30HVF1
L2
C2
RF-OUT
56pF
8pF
33pF 100pF
27
32
34
51
90
100
12
10
32
43pF 5pF 50pF
8
4.8
44
54
90
100
10.8
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
Publication Date : Oct．2011
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
